Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
| Parameter Name | Attribute value |
| Parts packaging code | TO-247 |
| package instruction | , |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 100 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 520 W |
| surface mount | NO |