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APT10M11B2VR

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size172KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

APT10M11B2VR Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

APT10M11B2VR Parametric

Parameter NameAttribute value
Parts packaging codeTO-247
package instruction,
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)100 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)520 W
surface mountNO

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