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BC849C

Description
100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size216KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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BC849C Overview

100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC849C Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage30 V
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
Transistor component materialssilicon
Maximum ambient power consumption0.3300 W
Transistor typeUniversal small signal
Minimum DC amplification factor420
Rated crossover frequency300 MHz
MCC
Micro Commercial Components
TM
Features
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BC846A
THRU
BC849C
NPN
Plastic-Encapsulate
Transistors
SOT-23
A
D
Maximum Ratings
Operating temperature : -55
Storage temperature :
-55
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Power Dissipation: 0.225W (T
amb
=25 )(Note 1)
Collector Current: 0.1A
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
to +150
to +150
DEVICE MARKING
BC846A=1A,46A; BC846B=1B,46B;
BC847A=1E,47A; BC847B=1F,47B; BC847C=1G,47C;
BC848A=1J,48A; BC848B=1K,48B: BC848C=1L,48C
BC849B=49B; BC849C=49C;
C
B
C
Electrical Characteristics @ 25
Symbol
Parameter
Unless Otherwise Specified
Min
Max
Units
G
B
F
E
E
OFF CHARACTERISTICS
V
(BR)CBO
H
K
J
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
H
FE(1)
V
CE(sat)
V
BE(sat)
f
T
Collector-Base Breakdown Voltage
(I
C
=10µAdc, I
E
=0)
BC846
BC847
BC848, BC849
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
BC846
BC847
BC848,
BC849
Collector-Emitter Breakdown Voltage
(I
E
=10µAdc, I
C
=0)
Collector Cut-off Current
BC846 (V
CB
=80V, I
E
=0)
BC847 (V
CB
=50V, I
E
=0)
BC848,
BC849 (V
CB
=30V, I
E
=0)
Collector Cut-off Current
BC846 (V
CE
=60V, I
B
=0)
BC847 (V
CE
=45V, I
B
=0)
BC848,
BC849 (V
CE
=30V, I
B
=0)
Emitter Cut-off Current
(V
EB
=5V, I
C
=0mA)
DC Current Gain(V
CE
=5V, I
C
=2mA)
BC846A, 847A, 848A
BC846B, 847B, 848B ,849B
BC847C, BC848C ,BC849C
Collector-Emitter Saturation Voltage
(I
C
=100mA, I
B
=5mA)
Base-Emitter Saturation Voltage
(I
C
=100mA, I
B
=5mA)
Transition Frequency
(V
CE
=5V, I
C
=10mA, f=100MHz)
Vdc
---
---
---
80
50
30
DIMENSIONS
Vdc
---
---
---
65
45
30
Vdc
---
---
6
0.1
µAdc
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
---
0.1
µAdc
Suggested Solder
Pad Layout
.031
.800
.035
.900
---
0.1
µAdc
110
200
420
---
220
450
800
0.5
.079
2.000
inches
mm
Vdc
---
1.1
Vdc
.037
.950
.037
.950
100
---
MHz
Note 1: Transistor mounted on an FR4 printed-circuit board
Revision:
A
www.mccsemi.com
1 of 2
2011/01/01

BC849C Related Products

BC849C BC846A_11 BC849B
Description 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3 3
Transistor polarity NPN NPN NPN
Maximum collector current 0.1000 A 0.1000 A 0.1000 A
Maximum Collector-Emitter Voltage 30 V 30 V 30 V
state DISCONTINUED DISCONTINUED DISCONTINUED
packaging shape Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING
Terminal location pair pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure single single single
Number of components 1 1 1
Transistor component materials silicon silicon silicon
Maximum ambient power consumption 0.3300 W 0.3300 W 0.3300 W
Transistor type Universal small signal Universal small signal Universal small signal
Minimum DC amplification factor 420 420 420
Rated crossover frequency 300 MHz 300 MHz 300 MHz
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