BC856 ... BC860
BC856 ... BC860
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
2.9
±0.1
0.4
3
1.3
1.1
PNP
250 mW
SOT-23
(TO-236)
0.01 g
Version 2011-07-11
Plastic case
Kunststoffgehäuse
±0.1
Type
Code
1
1.9
2
2.5 max
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions - Maße [mm]
1=B
2=E
3=C
Maximum ratings (T
A
= 25°C)
Grenzwerte (T
A
= 25°C)
BC856
BC857
BC860
45 V
50 V
5V
250 mW
1
)
100 mA
200 mA
-55...+150°C
-55…+150°C
BC858
BC859
30 V
30 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- V
CEO
- V
CBO
- V
EBO
P
tot
- I
C
- I
CM
T
j
T
S
65 V
80 V
Characteristics (T
j
= 25°C)
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
- V
CE
= 5 V, - I
C
= 10 µA
Group A
Group B
Group C
Group A
Group B
Group C
H
FE
h
FE
h
FE
H
FE
h
FE
h
FE
- V
CEsat
- V
CEsat
- V
BEsat
- V
BEsat
–
–
–
125
220
420
–
–
–
–
Kennwerte (T
j
= 25°C)
Typ.
90
150
270
180
290
520
–
–
700 mV
900 mV
Max.
–
–
–
250
475
800
300 mV
650 mV
–
–
- V
CE
= 5 V, - I
C
= 2 mA
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung
2
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung
2
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
1
2
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
http://www.diotec.com/
© Diotec Semiconductor AG
1
BC856 ... BC860
Characteristics (T
j
= 25°C)
Min.
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
- V
CE
= 5 V, I
C
= - 2 mA
- V
CE
= 5 V, I
C
= - 10 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- V
CB
= 30 V, (E open)
- V
CE
= 30 V, T
j
= 125°C, (E open)
Emitter-Base cutoff current
- V
EB
= 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
Noise figure – Rauschzahl
- V
CE
= 5 V, - I
C
= 200 µA
R
G
= 2 kΩ, f = 1 kHz, Δf = 200 Hz
BC856 ... BC858
BC859 ... BC860
F
F
R
thA
–
–
2 dB
1.2 dB
< 420 K/W
1
)
BC846 ... BC850
BC856A = 3A
BC856B = 3B
BC857A = 3E
BC857B = 3F
BC857C = 3G
BC860B = 3F
BC860C
= 3G or 4G
BC858A = 3E
BC858B = 3F
BC858C = 3G
BC859B = 3F
BC859C
= 3G or 4C
10 dB
4 dB
C
EB0
–
9 pF
–
C
CBO
–
–
4.5 pF
f
T
100 MHz
–
–
- I
EBO
–
–
100 nA
- I
CBO
- I
CBO
–
–
–
–
15 nA
4 µA
- V
BE
- V
BE
600 mV
–
–
–
750 mV
720 mV
Kennwerte (T
j
= 25°C)
Typ.
Max.
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking of available current gain groups
Stempelung der lieferbaren
Stromverstärkungsgruppen
2
1
Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
2
Power technology
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