BCU83
MECHANICAL DATA
Dimensions in mm
6 .0
5 .0
NPN EPITAXIAL PLANAR
SILICON TRANSISTOR
Ideal for high current driver
applications requiring
efficient low loss devices
8 .5
3 .0
1 4 .0
FEATURES
• LOW V
CE(SAT)
• HIGH CURRENT
• HIGH ENERGY RATING
1 .4 5 P IT C H
0 .5
T Y P
APPLICATIONS
4 .7
E
C
B
0 .5
• Any High Current Driver Applications
Requiring Efficient Low Loss Devices.
TO92(EXTENDED)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
P
tot
T
stg
T
j
Collector – Base voltage
Collector – Emitter voltage
Emitter – Base voltage
Collector current
Peak Collector current
Total Dissipation at T
case
= 25°C
Storage Temperature
Maximum Operating Junction Temperature
60V
20V
6V
5A
8A
0.9W
–55 to 150°C
150°C
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail:
magnatec@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim 6/99
BCU83
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
I
CBO
I
EBO
V
CE(sat)*
V
BE(sat)*
h
FE*
f
T
C
ob
Collector Cut–Off Current
Emitter Cut–Off Current
Collector – Emitter Saturation
Voltage
Base – Emitter Saturation
Voltage
DC Current Gain
Transition frequency
Output Capacitance
Test Conditions
V
CB
= 50V
V
EB
= 5V
I
C
= 3A
I
C
= 3A
V
CE
= 2V
V
CE
= 2V
V
CE
= 10V
V
CB
= 10V
I
E
= 0
I
C
= 0
I
B
= 60mA
I
B
= 60mA
I
C
= 0.5A
I
C
= 3A
I
C
= 50mA
f = 1MHz
Min.
Typ.
Max.
1
1
0.5
Unit.
mA
mA
V
V
—
MHz
pF
0.6
100
75
120
45
1.5
560
* Pulse test tp = 300
m
s ,
d £
2%
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail:
magnatec@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim 6/99
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