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Datasheet> All Categories > semiconductor> Discrete semiconductor> BCV49
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BCV49

Description
500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA
Categorysemiconductor    Discrete semiconductor   
File Size12KB，1 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BCV49 Overview

500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA

BCV49 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.5000 A
Maximum Collector-Emitter Voltage60 V
Processing package descriptionPlastic, SC-62, TO-243, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingtin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuredarlington
Shell connectionCOLLECTOR
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Maximum ambient power consumption1 W
Transistor typeUniversal small signal
Minimum DC amplification factor2000
Rated crossover frequency220 MHz

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Download Datasheet
SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – SEPTEMBER 1995
COMPLEMENTARY TYPE –
PARTMARKING DETAILS –
BCV48
EG
BCV49
C
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
80
60
10
800
500
1
-65 to +150
UNIT
V
V
V
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
80
60
10
100
10
100
1
1.5
2000
4000
10000
2000
170
3.5
MHz
pF
TYP.
MAX.
UNIT
V
V
V
nA
µA
nA
V
V
CONDITIONS.
I
C
=100µA
I
C
=10mA*
I
E
=10µA
V
CB
=60V
V
CB
=60V, T
amb
=150°C
V
EB
=4V
I
C
=100mA, I
B
=0.1mA*
I
C
=100mA, I
B
=0.1mA*
I
C
=100µA, V
CE
=1V†
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=50mA, V
CE
=5V
f = 20MHz
V
CB
=10V, f=1MHz
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
V
BE(sat)
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
For typical graphs see FMMT38A datasheet
† Periodic Sample Test Only.
Spice parameter data is available upon request for this device
3 - 26

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