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BCX17

Description
45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size42KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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BCX17 Overview

45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BCX17 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-based maximum capacity15 pF
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.6 V
Base Number Matches1
BCX17
Transistors
PNP small signal transistor
BCX17
Small load switch transistor with high gain and Low saturation voltage.
Features
1) High gain and low saturation voltage.
2) Ideal for small load switching applications.
3) Complements the BCX19.
Dimensions
(Unit : mm)
SST3
2.9
0.4
(3)
0.95
0.45
Packaging specifications
Package
Type
BCX17
Code
Basic ordering unit (pieces)
Taping
T116
3000
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
0.95 0.95
1.9
1.3
2.4
0.15
Each lead has same dimensions
Abbreviated symbol : GT1
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-emitter voltage (V
BE
=0)
Collector-emitter voltage (open base)
Emitter-base voltage
Collector current
Collector current (peak value)
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
Limits
−50
−45
−5
−0.5
−1
0.2
Collector power dissipation
Junction temperature
Storage temperature
P
C
Tj
Tstg
0.35
0.425
150
−65
to 150
Unit
V
V
V
A
A
W
W
W
∗2
°C
°C
Mounted on a 7
×
5
×
0.6 mm CERAMIC SUBSTRATE
2
Mounted on a 15
×
15
×
0.6 mm CERAMIC SUBSTRATE
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Min.
−50
−45
−5
100
DC current transfer ratio
h
FE
70
40
Transition frequency
Collector-base cutoff current
f
T
I
CBO
Typ.
200
Max.
−0.1
−10
−0.62
−1.2
600
−5
MHz
Unit
V
V
V
I
C
= −50µ
A
I
C
= −10mA
I
E
= −50µ
A
V
CB
= −20V
V
EB
= −5V
I
C
/I
B
= −500mA/ −50mA
V
CE
/I
C
= −1V/ −500mA
V
CE
= −1V,
I
C
= −100mA
V
CE
= −1V,
I
C
= −300mA
V
CE
= −1V,
I
C
= −500mA
V
CE
= −5V,
I
E
= −20mA,
f=100MHz
V
CB
= −20V,
Ta=150
°C
Conditions
Collector-emitter breakdown voltage BV
CES
Collector-emitter breakdown voltage BV
CEO
Emitter-base breakdown voltage
Collector-base cutoff current
Emitter-base cutoff current
Collector-emitter saturation voltage
Base-emitter voltage
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
µ
A
µ
A
V
V
µ
A
0.2Min.
1/1

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