BCX51,BCX52,BCX53
TRANSISTOR (PNP)
FEATURES
NPN Complements to BCX54,BCX55,BCX56
Low Voltage
High Current
APPLICATIONS
Medium Power General Purposes
Driver Stages of Audio Amplifiers
MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD
BCX52:AE, BCX52-10:AG, BCX52-16:AM
BCX53:AH, BCX53-10:AK, BCX53-16:AL
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
Parameter
BCX51
Collector-Base Voltage
BCX52
BCX53
V
CEO
Collector-Emitter Voltage
BCX51
BCX52
BCX53
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-45
-60
-100
-45
-60
-80
-5
-1
500
250
150
-55~+150
V
A
mW
℃/W
℃
℃
V
V
Unit
1
JinYu
semiconductor
www.htsemi.com
D½½½:2011/05
BCX51,BCX52,BCX53
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V
(BR)CBO
Test
conditions
BCX51
I
C
=-100µA,I
E
=0
BCX52
BCX53
BCX51
Collector-emitter breakdown voltage
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base -emitter voltage
Transition frequency
V
CE(sat)
V
BE
f
T
I
C
=-1mA,I
B
=0
I
E
=-100µA,I
C
=0
V
CB
=-30V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-2V, I
C
=-5mA
V
CE
=-2V, I
C
=-150mA
V
CE
=-2V, I
C
=-0.5A
I
C
=-0.5A,I
B
=-50mA
V
CE
=-2V, I
C
=-0.5A
V
CE
=-5V,I
C
=-10mA, f=100MHz
50
63
63
40
-0.5
-1
V
V
MHz
250
BCX52
BCX53
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Min
-45
-60
-100
-45
-60
-80
-5
-0.1
-0.1
V
µA
µA
V
V
Typ
Max
Unit
CLASSIFICATION OF
h
FE(2)
BCX51
RANK
BCX52
BCX53
RANGE
63–250
BCX51-10
BCX52-10
BCX53-10
63–160
BCX51-16
BCX52-16
BCX53-16
100–250
2
JinYu
semiconductor
www.htsemi.com
D½½½:2011/05