BCX54 ,BCX55,BCX56
TRANSISTOR (NPN)
SOT-89-3L
FEATURES
PNP Complements to BCX51,BCX52,BCX53
Low Voltage
High Current
APPLICATIONS
Driver Stages of Audio Amplifiers
MARKING:BCX54:BA, BCX54-10:BC, BCX54-16:BD
BCX55:BE, BCX55-10:BG, BCX55-16BM
BCX56:BH, BCX56-10:BK, BCX56-16:BL
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
Parameter
BCX54
Collector-Base Voltage
BCX55
BCX56
V
CEO
Collector-Emitter Voltage
BCX54
BCX55
BCX56
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
45
60
100
45
60
80
5
1
500
250
150
-55~+150
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
mW
℃/W
℃
℃
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
BCX54 ,BCX55,BCX56
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V
(BR)CBO
Test
conditions
BCX54
I
C
=100µA,I
E
=0
BCX55
BCX56
BCX54
Collector-emitter breakdown voltage
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base -emitter voltage
Transition frequency
V
CE(sat)
V
BE
f
T
I
C
=1mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V, I
C
=5mA
V
CE
=2V, I
C
=150mA
V
CE
=2V, I
C
=0.5A
I
C
=0.5A,I
B
=50mA
V
CE
=2V, I
C
=0.5A
V
CE
=5V,I
C
=10mA, f=100MHz
130
40
63
25
0.5
1
V
V
MHz
250
BCX55
BCX56
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Min
45
60
100
45
60
80
5
0.1
0.1
V
µA
µA
V
V
Typ
Max
Unit
CLASSIFICATION OF
h
FE(2)
BCX54
RANK
BCX55
BCX56
RANGE
63–250
BCX54-10
BCX55-10
BCX56-10
63–160
BCX54-16
BCX55-16
BCX56-16
100–250
２
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
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