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BCX55

Description
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243
Categorysemiconductor    Discrete semiconductor   
File Size597KB,4 Pages
ManufacturerWILLAS ELECTRONIC CORP.
Websitehttp://www.willas.com.tw/
Download Datasheet Parametric View All

BCX55 Overview

1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243

BCX55 Parametric

Parameter NameAttribute value
Maximum collector current1 A
Maximum Collector-Emitter Voltage60 V
Number of terminals3
Processing package descriptionPLASTIC, SC-62, 3 PIN
each_compliYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateActive
Shell connectionCOLLECTOR
structureSINGLE
Minimum DC amplification factor25
jedec_95_codeTO-243
jesd_30_codeR-PSSO-F3
jesd_609_codee3
moisture_sensitivity_level1
Number of components1
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_260
larity_channel_typeNPN
wer_dissipation_max__abs_1.25 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountYES
terminal coatingTIN
Terminal formFLAT
Terminal locationSINGLE
ime_peak_reflow_temperature_max__s_30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Rated crossover frequency130 MHz
SOT-89 Plastic-Encapsulate Transistors
Features
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Batch process design, excellent power dissipation offers
FM120-M
BCX55
THRU
BCX56
FM1200-M
Pb Free Produ
Package outline
SOD-123H
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
TRANSISTOR (NPN)
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
FEATURES
Silicon epitaxial planar chip, metal silicon junction.
PNP
Lead-free parts meet
BCX51,BCX52,BCX53
Complements to
environmental standards of
MIL-STD-19500 /228
Low Voltage
RoHS product for packing code suffix "G"
High
Halogen free product for packing code suffix "H"
Current
0.146(3.7)
0.130(3.3)
SOT-89
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1. BASE
2. COLLECTOR
3. EMITTER
Mechanical data
Pb-Free package is available
Epoxy : UL94-V0 rated flame retardant
RoHS product for packing code suffix ”G”
Case : Molded plastic, SOD-123H
Halogen free product for packing code suffix “H”
Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
,
0.031(0.8) Typ.
0.031(0.8) Typ.
APPLICATIONS
: Indicated by cathode band
Polarity
Driver Stages of Audio Amplifiers
Mounting Position : Any
Weight : Approximated 0.011 gram
Method 2026
Dimensions in inches and (millimeters)
MARKING: BCX55:BE, BCX55-10:BG, BCX55-16BM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
BCX56:BH, BCX56-10:BK, BCX56-16:BL
Ratings at 25℃ ambient temperature unless otherwise specified.
 
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
V
RRM
V
DC
12
20
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
 
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
14
Maximum RMS Voltage
V
RMS
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Maximum Average Forward Rectified Current
 
I
O
 
BCX55
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
Collector-Base Voltage
V
CBO
superimposed on rated load (JEDEC method)
Symbol
Parameter
Value
60
Unit
V
 
 
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
BCX56
ΘJA
R
BCX55
T
J
BCX56
C
J
 
100
 
60
-55 to +125
80
0.50
1
 
-55 to +150
V
CEO
Collector-Emitter Voltage
TSTG
V
 
-
65
to +175
 
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
V
EBO
I
C
P
C
T
CHARACTERISTICS
Emitter-Base Voltage
5
V
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
Collector Current
A
0.70
mW
℃/W
0.85
0.5
10
0.9
0.92
 
Collector Power Dissipation
NOTES:
R
θJA
@T A=125℃
I
R
500
250
150
-55~+150
Thermal Resistance From Junction To Ambient
Junction Temperature
j
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
 
 
T
stg
Storage Temperature
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
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