BCX70 datasheet, PDF - EEWORLD Datasheet

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BCX70: Description200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size321KB，2 Pages; ManufacturerCentral Semiconductor

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BCX70 Overview

200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BCX70 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	_compli
Other features	LOW NOISE
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.62 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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BCX70 SERIES

SURFACE MOUNT

NPN SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCX70 Series

types are NPN Silicon Transistors manufactured

by the epitaxial planar process, epoxy molded in a

surface mount package, designed for general purpose

switching and amplifier applications.

MARKING CODES: BCX70G:

BCX70H:

BCX70J:

BCX70K:

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

VBE(ON)

SYMBOL

VCBO

VCEO

VEBO

ICM

IBM

TJ, Tstg

UNITS

°C

°C/W

5.0

100

200

350

-65 to +150

357

CHARACTERISTICS:

(TA=25°C unless

TEST CONDITIONS

VCB=45V

VCB=45V, TA=150°C

VEB=4.0V

IC=10μA

IC=10mA

IE=1.0μA

IC=10mA, IB=250μA

IC=50mA, IB=1.25mA

IC=10mA, IB=250μA

IC=50mA, IB=1.25mA

VCE=5.0V, IC=2.0mA

VCE=5.0V, IC=10mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

VCE=5.0V, IC=200μA, RS=2.0kΩ,

f=1.0kHz, BW=200Hz

otherwise noted)

MIN

TYP

MAX

5.0

0.05

0.10

0.60

0.70

0.55

100

0.35

0.55

0.85

1.05

0.75

250

1.7

6.0

BCX70H

MIN

MAX

180

310

BCX70J

MIN MAX

250

460

UNITS

μA

MHz

BCX70K

MIN MAX

100

380

630

100

BCX70G

MIN

MAX

hFE

VCE=5.0V,

VCE=1.0V,

IC=10μA

IC=2.0mA

IC=50mA

120

220

R2 (20-November 2009)

BCX70 Related Products

	BCX70	BCX70K	BCX70G	BCX70H	BCX70J
Description	200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3
Contacts	3	3	3	3	3
Reach Compliance Code	_compli	_compli	unknow	unknow	unknow
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.8 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	45 V	45 V	45 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	100	50	70	90
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.62 W	0.25 W	0.25 W	0.25 W	0.25 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
Maker	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
ECCN code	-	EAR99	EAR99	EAR99	EAR99
transistor applications	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING

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