BCX70J datasheet, PDF - EEWORLD Datasheet

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BCX70J: Description100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236; CategoryDiscrete semiconductor The transistor; File Size983KB，3 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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BCX70J Overview

100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236

BCX70J Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.2 A
Collector-based maximum capacity	4.5 pF
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	250
JESD-30 code	R-PDSO-G3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN SILVER COPPER
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	125 MHz
VCEsat-Max	0.3 V

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NPN small signal transistor

BCX70J, K

Features

1) Ideal for switching and AF amplifier applications.

2) Complements the BCX71.

Dimensions

(Unit : mm)

BCX70J,K

2.9

0.4

0.95

0.45

Package

Type

BCX70J, K

Code

Basic ordering unit (pieces)

Taping

T116

3000

(1)Emitter

(2)Base

(3)Collector

(2)

(1)

0.95 0.95

1.9

1.3

2.4

Packaging

specifications

(3)

0.15

Each lead has same dimensions

Abbreviated symbol : GAJ (BCX70J)

GAK (BCX70K)

Absolute

maximum ratings

(Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

CBO

CEO

EBO

Tstg

Limits

0.2

0.35

150

−55

to 150

Unit

∗

°C

∗

Mounted on a 7

0.6 mm CERAMIC SUBSTRATE

Electrical

characteristics

(Ta=25C)

Parameter

Symbol

Min.

−

0.55

250

125

−

Typ.

−

Max.

−

0.1

0.35

0.55

0.85

1.05

0.75

630

−

4.5

Unit

2mA

10μA

45V

10mA/ 0.25mA

50mA/ 1.25mA

10mA/ 0.25mA

50mA/ 1.25mA

5V, I

2mA

5V, I

2mA

5V, I

50mA

5V, I

10mA, f=100MHz

10V, f=1MHz, I

=0A

5V, I

200μA, f=1kHz,Rg=2kΩ

45V, Ta=150

°C

Conditions

Collector-emitter breakdown voltage BV

CEO

Emitter-base breakdown voltage

Collector-emitter cutoff current

Emitter-base cutoff current

Collector-emitter saturation voltage

EBO

CES

EBO

CE(sat)1

CE(sat)2

Base-emitter saturation voltage

Base-emitter voltage

DC current transfer ratio

Transition frequency

Collector output capacitance

Noise figure

Collector-base cutoff current

BE(sat)1

BE(sat)2

BE(on)

FE1

FE2

Cob

CBO

−

MHz

This parts are classified into the categories below and given h

item.

Part. No

FE1

FE2

BCX70J

BCX70K

250 to 460 380 to 630

90 or more 125 or more

www.rohm.com

○

1/2

0.2Min.

2011.11 - Rev.B

BCX70J Related Products

	BCX70J	BCX70K
Description	100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.2 A	0.2 A
Collector-based maximum capacity	4.5 pF	4.5 pF
Collector-emitter maximum voltage	45 V	45 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	250	380
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e1	e1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.25 W	0.25 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	TIN SILVER COPPER	TIN SILVER COPPER
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	10	10
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	125 MHz	125 MHz
VCEsat-Max	0.3 V	0.3 V

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