INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
BD202F/204F
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -45V(Min)- BD202F
-60V(Min)- BD204F
·Complement
to Type BD201F/203F
APPLICATIONS
·Designed
for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD202F
V
CBO
Collector-Base Voltage
BD204F
BD202F
V
CEO
Collector-Emitter Voltage
BD204F
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
-60
-5
-8
-12
-3
60
150
-65~150
V
A
A
A
W
℃
℃
-60
-45
V
VALUE
-60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
6.3
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BD202F
I
C
= -0.2A ;I
B
= 0
BD204F
V
(BR)CBO
V
(BR)EBO
V
CE(sat)-1
V
CE(sat)-2
V
BE(sat)
V
BE(
on
)
I
CEO
I
CBO
I
EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
BD202F
h
FE-1
DC Current Gain
BD204F
h
FE-2
f
T
DC Current Gain
Current-Gain—Bandwidth Product
I
C
= -2A ; V
CE
= -2V
I
C
= 11A ; V
CE
= -2V
I
C
= -0.3A ; V
CE
= -3V, f
test
= 1.0MHz
I
C
= -1mA ;I
E
= 0
I
E
= -1mA ;I
C
= 0
I
C
= -3A; I
B
= -0.3A
I
C
= -6A; I
B
= -0.6A
I
C
= -6A; I
B
= -0.6A
I
C
= -3A ; V
CE
= -2V
V
CE
= -30V; I
B
= 0
V
CB
= V
CBO
;I
E
= 0
V
CB
=
1
/
2
V
CBO
;I
E
= 0; T
J
= 150℃
V
EB
= -5V; I
C
=0
I
C
= -3A ; V
CE
= -2V
CONDITIONS
BD202F/204F
MIN
-45
MAX
UNIT
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
V
-60
-60
-5
-1.0
-1.5
-2.0
-1.5
-0.2
-0.1
-1.0
-0.5
V
V
V
V
V
V
mA
mA
mA
30
30
7.0
MHz
Switching Times
t
on
t
off
Turn-On Time
I
C
= -2A; I
B1
= -I
B2
= -0.2A
Turn-Off Time
2
μs
1
μs
isc Website：www.iscsemi.cn
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