Middle Power Class-D Speaker Amplifiers
Analog Input / BTL Output
Class-D Speaker Amplifier
BD5424EFS
No.10075EBT04
●Description
BD5424EFS is a 20W + 20W stereo class-D power amplifier IC, developed for space-saving and low heat-generation
applications such as low-profile TV sets. The IC employs state-of-the-art Bipolar, CMOS, and DMOS (BCD) process technology
that eliminates turn-on resistance in the output power stage and internal loss due to line resistances up to an ultimate level.
With this technology, the IC has achieved high efficiency of 91% (10W + 10W output with 8Ω load), which is the top class in
the industry. The IC, in addition, employs a compact back-surface heat radiation type power package to achieve low power
consumption and low heat generation and eliminates necessity of installing an external radiator, up to a total output of 40W.
This product satisfies both needs for drastic downsizing, low-profile structures and powerful, high-quality playback of the
sound system.
●Features
1) A high efficiency of 91% (10W + 10W output with 8Ω load), which is the highest grade in the industry and low heat-generation.
2) An output of 20W + 20W (17V, with 8Ω load) is allowed without an external heat radiator.
3) Driving a lowest rating load of 3.6Ω is allowed.
4) Pop noise upon turning power on/off and power interruption has been reduced.
5) High-quality audio muting is implemented by soft-switching technology.
6) An output power limiter function limits excessive output to speakers.
7) High-reliability design provided with built-in protection circuits against high temperatures, against VCC shorting and
GND shorting, against reduced-voltage, and against applying DC voltage to speaker.
8) A master/slave function allowing synchronization of multiple devices reduces beat noises.
9) Adjustment of internal PWM sampling clock frequencies (350kHz to 500kHz) allows easy protective measures
against unwanted radio emission to AM radio band.
10) A compact back-surface heat radiation type power package is employed.
HTSSOP-A44 (5mm × 7.5mm × 1.0mm, pitch 0.8mm)
●Absolute
Maximum Ratings
A circuit must be designed and evaluated not to exceed absolute maximum rating in any cases and even momentarily, to prevent
reduction in functional performances and thermal destruction of a semiconductor product and secure useful life and reliability.
The following values assume Ta =25℃. For latest values, refer to delivery specifications.
Parameter
Supply voltage
Power dissipation
Input voltage for signal pin
Input voltage for control pin
Input voltage for clock pin
Operating temperature range
Storage temperature range
Maximum junction temperature
Symbol
V
CC
P
d
V
IN
V
CONT
V
OSC
T
opr
T
stg
T
jmax
Ratings
+20
2.0
4.5
-0.2 ~ +7.2
-0.2 ~ Vcc+0.2
-0.2 ~ +7.2
-40 ~ +85
-55 ~ +150
+150
Unit
V
W
W
V
V
V
℃
℃
℃
Conditions
Pin 7, 8, 15, 16, 29, 30, 37, 38, 40
(Note 1, 2)
(Note 3)
(Note 4)
Pin 1, 44 (Note 1)
Pin 20, 24 (Note 1)
Pin 23 (Note 1)
(Note 1) A voltage that can be applied with reference to GND (pins 11, 12, 33, 34, and 43)
(Note 2) Pd and Tjmax=150℃ must not be exceeded.
(Note 3) 70mm × 70mm × 1.6mm FR4 One-sided glass epoxy board (Back copper foil 0%) installed.
If used under Ta=25℃ or higher, reduce 16mW for increase of every 1℃. The board is provided with thermal via.
(Note 4) 70mm × 70mm × 1.6mm FR4 Both-sided glass epoxy board (Back copper foil 100%) installed.
If used under Ta=25℃ or higher, reduce 36mW for increase of every 1℃. The board is provided with thermal via.
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© 2010 ROHM Co., Ltd. All rights reserved.
1/17
2010.05 - Rev.B
BD5424EFS
●Operating
Conditions
The following values assume Ta =25℃. Check for latest values in delivery specifications.
Parameter
Supply voltage
Minimum load resistance
(Note 5) Pd should not be exceeded.
Technical Note
Symbol
V
CC
R
L
Ratings
+10 ~ +18
3.6
Unit
V
Ω
Conditions
Pin 7, 8, 15, 16, 29, 30, 37, 38, 40
(Note 5)
●Electrical
Characteristics
Except otherwise specified T
a
= 25℃, V
CC
= 12V, f
IN
= 1kHz, R
g
= 0Ω, R
L
= 8Ω, MUTEX="H", MS="L", SDX="H".
For latest values, refer to delivery specifications.
Parameter
Whole circuit
Circuit current 1 (Sampling mode)
Circuit current 2 (Muting mode)
Control circuit
“H” level input voltage
“L” level input voltage
Audio circuit
Voltage gain
Maximum output power 1 (Note 6)
Maximum output power 2 (Note 6)
Total harmonic distortion (Note 6)
Crosstalk
Output noise voltage (Sampling mode)
Residual noise voltage (Muting mode)
Mute Attenuation
Internal sampling clock frequency
G
V
P
O1
P
O2
THD
CT
V
NO
V
NOM
G
vm
F
OSC
28
10
20
0.1
85
80
35
98
350
dB
W
W
%
dB
µVrms
µVrms
dB
kHz
P
O
= 1W
THD+N = 10%
Vcc=17V, THD+N = 10%
P
O
= 1W, BW=20Hz ~ 20kHz
P
O
= 1W, Rg = 0Ω, BW = IHF-A
Rg = 0Ω, BW = IHF-A
Rg = 0Ω, BW = IHF-A, MUTEX = “L”
Po =1W, BW =IHF-A, MUTEX = “L”
MS = “L” (In master operation)
V
IH
V
IL
2.3 ~ 12
0 ~ 0.8
V
V
SDX, MUTEX, MS
SDX, MUTEX, MS
I
CC1
I
CC2
30
12
mA
mA
With no signal
MUTEX = “L”
Symbol
Limits
Unit
Conditions
(Note 6) The rated values of items above indicate average performances of the device, which largely depend on circuit layouts, components,
and power supplies. The reference values are those applicable to the device and components directly installed on a board specified by us.
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© 2010 ROHM Co., Ltd. All rights reserved.
2/17
2010.05 - Rev.B
Microcontroller MCU
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