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BD680

Description
4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
File Size36KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BD680 Overview

4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126

BD680 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current4 A
Maximum Collector-Emitter Voltage80 V
Processing package descriptionPLASTIC PACKAGE-3
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureDARLINGTON
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Maximum ambient power consumption40 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor750
Rated crossover frequency1 MHz
Inchange Semiconductor
Product Specification
Silicon PNP Darligton Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type BD675/BD677/BD679
・DARLINGTON
・High
DC current gain
APPLICATIONS
・For
use as output devices in
complementary general–purpose
amplifier applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
BD676/BD678/BD680
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
BD676
V
CBO
Collector-base voltage
BD678
BD680
BD676
V
CEO
Collector-emitter voltage
BD678
BD680
V
EBO
I
C
I
B
P
C
T
j
T
stg
Emitter -base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-45
-60
-80
-45
-60
-80
-5
-4
-0.1
40
150
-55~150
V
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
3.13
UNIT
℃/W

BD680 Related Products

BD680 BD676 BD678
Description 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
Number of terminals 3 3 3
Transistor polarity PNP PNP PNP
Maximum collector current 4 A 4 A 4 A
Maximum Collector-Emitter Voltage 80 V 60 V 60 V
Processing package description PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
state ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
terminal coating TIN LEAD TIN LEAD TIN LEAD
Terminal location SINGLE SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure DARLINGTON DARLINGTON DARLINGTON
Number of components 1 1 1
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Maximum ambient power consumption 40 W 40 W 40 W
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Minimum DC amplification factor 750 750 750
Rated crossover frequency 1 MHz 1 MHz 1 MHz
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