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BDV66B

Description
isc Silicon PNP Darlington Power Transistor
File Size79KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BDV66B Overview

isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector
Current -I
C
= -
16A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= -2.0V(Max.)@ I
C
= -10A
·Complement
to Type BDV67/A/B/C
APPLICATIONS
·Designed
for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDV66
Collector-Base
Voltage
BDV66A
BDV66B
BDV66C
BDV66
Collector-Emitter
Voltage
BDV66A
BDV66B
BDV66C
V
EBO
I
C
I
CM
I
B
B
BDV66/A/B/C
VALUE
-80
-100
UNIT
V
CBO
V
-120
-140
-60
-80
V
-100
-120
-5
-16
-20
-0.5
175
150
-65~150
V
A
A
A
W
V
CEO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
0.625
UNIT
℃/W
isc Website:www.iscsemi.cn

BDV66B Related Products

BDV66B BDV66 BDV66A BDV66C
Description isc Silicon PNP Darlington Power Transistor isc Silicon PNP Darlington Power Transistor isc Silicon PNP Darlington Power Transistor isc Silicon PNP Darlington Power Transistor

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