BUK7Y8R7-60E
20 February 2013
LF
PA
K
N-channel 60 V, 8.7 mΩ standard level MOSFET in LFPAK56
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
•
•
•
•
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with V
GS(th)
rating of greater than 1 V at 175 °C
3. Applications
•
•
•
•
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C
V
GS
= 10 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 10
I
D
= 20 A; V
DS
= 48 V; V
GS
= 10 V;
T
j
= 25 °C;
Fig. 12; Fig. 13
-
14
-
nC
Min
-
-
-
Typ
-
-
-
Max
60
87
147
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
5.27
8.7
mΩ
Dynamic characteristics
Q
GD
gate-drain charge
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NXP Semiconductors
BUK7Y8R7-60E
N-channel 60 V, 8.7 mΩ standard level MOSFET in LFPAK56
5. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
S
S
G
D
source
source
source
gate
mounting base; connected to
drain
1 2 3 4
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
LFPAK; Power-
SO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Package
Name
BUK7Y8R7-60E
LFPAK;
Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
Type number
7. Marking
Table 4.
Marking codes
Marking code
78E760
Type number
BUK7Y8R7-60E
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
R
GS
= 20 kΩ
T
j
≤ 175 °C; DC
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 1
T
mb
= 100 °C; V
GS
= 10 V;
Fig. 1
I
DM
P
tot
T
stg
BUK7Y8R7-60E
Min
-
-
-20
-
-
-
-
-55
Max
60
60
20
87
61
347
147
175
Unit
V
V
V
A
A
A
W
°C
peak drain current
total power dissipation
storage temperature
T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
Fig. 3
T
mb
= 25 °C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
20 February 2013
2 / 12
NXP Semiconductors
BUK7Y8R7-60E
N-channel 60 V, 8.7 mΩ standard level MOSFET in LFPAK56
Symbol
T
j
I
S
I
SM
E
DS(AL)S
Parameter
junction temperature
Conditions
Min
-55
Max
175
Unit
°C
Source-drain diode
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
I
D
= 87 A; V
sup
≤ 60 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped;
Fig. 2
[1]
[2]
100
-
-
87
347
A
A
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
[1][2]
-
76.2
mJ
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
003aai895
I
D
(A)
I
AL
(A)
10
2
(1)
003aai896
80
10
60
(2)
40
1
(3)
20
0
0
30
60
90
120
150
T
j
(°C)
180
10
-1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
Fig. 1.
Continuous drain current as a function of
mounting base temperature
Fig. 2.
Avalanche rating; avalanche current as a
function of avalanche time
BUK7Y8R7-60E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
20 February 2013
3 / 12
NXP Semiconductors
BUK7Y8R7-60E
N-channel 60 V, 8.7 mΩ standard level MOSFET in LFPAK56
I
D
(A)
10
3
Limit R
DSon
= V
DS
/ I
D
10
2
003aai897
t
p
= 10 us
100 us
10
DC
1
1 ms
10 ms
100 ms
10
-1
1
10
V
DS
(V)
10
2
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
10
Conditions
Fig. 4
Min
-
Typ
-
Max
1.02
Unit
K/W
003aai898
Z
th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
0.05
0.02
single shot
10
-2
t
p
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
P
δ=
10
-1
t
p
T
t
T
t
p
(s)
1
Fig. 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7Y8R7-60E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
20 February 2013
4 / 12
NXP Semiconductors
BUK7Y8R7-60E
N-channel 60 V, 8.7 mΩ standard level MOSFET in LFPAK56
10. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 8; Fig. 9
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 8
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
Fig. 8
I
DSS
drain leakage current
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 60 V; V
GS
= 0 V; T
j
= 175 °C
I
GSS
gate leakage current
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 10
V
GS
= 10 V; I
D
= 20 A; T
j
= 175 °C;
Fig. 11; Fig. 10
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
r
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
V
DS
= 45 V; R
L
= 2 Ω; V
GS
= 10 V;
R
G(ext)
= 5 Ω; T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C;
Fig. 14
I
D
= 20 A; V
DS
= 48 V; V
GS
= 10 V;
T
j
= 25 °C;
Fig. 12; Fig. 13
-
-
-
-
-
-
-
-
-
-
46
9.8
14
2375
310
195
10
16
31
19
-
-
-
3159
372
267
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
-
-
19.5
mΩ
-
-
-
-
-
0.03
-
2
2
5.27
10
500
100
100
8.7
µA
µA
nA
nA
mΩ
1
-
-
V
-
-
4.5
V
Min
60
54
2.4
Typ
-
-
3
Max
-
-
4
Unit
V
V
V
Static characteristics
V
GS(th)
Source-drain diode
source-drain voltage
reverse recovery time
recovered charge
I
S
= 20 A; V
GS
= 0 V; T
j
= 25 °C;
Fig. 15
I
S
= 20 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 25 V; T
j
= 25 °C
-
-
-
0.83
25
23
1.2
-
-
V
ns
nC
BUK7Y8R7-60E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
20 February 2013
5 / 12
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