BUK9107-40ATC datasheet, PDF - EEWORLD Datasheet

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BUK9107-40ATC: DescriptionN-channel TrenchPLUS logic level FET; CategoryDiscrete semiconductor The transistor; File Size239KB，15 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BUK9107-40ATC Overview

N-channel TrenchPLUS logic level FET

BUK9107-40ATC Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PSSO-G4
Contacts	5
Reach Compliance Code	_compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	1400 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (Abs) (ID)	75 A
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.0077 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	272 W
Maximum pulsed drain current (IDM)	560 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BUK9107-40ATC

N-channel TrenchPLUS logic level FET

Rev. 04 — 16 February 2009

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. The devices include TrenchPLUS diodes for

clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

Allows responsive temperature

monitoring due to integrated

temperature sensor

Low conduction losses due to low

on-state resistance

Q101 compliant

1.3 Applications

12 V and 24 V high power motor

drives

Automotive and general purpose

power switching

Electrical Power Assisted Steering

(EPAS)

Protected drive for lamps

1.4 Quick reference data

Table 1.

tot

DSon

Quick reference

Conditions

= 5 V; T

= 25 °C; see

Figure 2;

see

Figure 3

= 25 °C; see

Figure 1

= 10 V; I

= 50 A; T

= 25 °C

= 4.5 V; I

= 50 A; T

= 25 °C

= 5 V; I

= 50 A; T

= 25 °C;

see

Figure 7;

see

Figure 8

F(TSD)

temperature sense diode

temperature coefficient

temperature sense diode

forward voltage

[1]

Symbol Parameter

drain current

total power dissipation

junction temperature

drain-source on-state

resistance

Min

[1]

-55

-1.4

648

Typ

5.2

5.8

-1.54

658

Max

140

272

175

6.2

7.7

-1.68

668

Unit

°C

mΩ

mV/K

= 250 µA; T

> -55 °C; T

< 175 °C

= 250 µA; T

= 25 °C

Current is limited by power dissipation chip rating.

BUK9107-40ATC Related Products

	BUK9107-40ATC	BUK9107-40ATC,118
Description	N-channel TrenchPLUS logic level FET	N-channel TrenchPLUS logic level FET
Is it Rohs certified?	conform to	conform to
package instruction	SMALL OUTLINE, R-PSSO-G4	PLASTIC, D2PAK-5
Contacts	5	5
Reach Compliance Code	_compli	_compli
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	1400 mJ	1400 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V	40 V
Maximum drain current (Abs) (ID)	75 A	75 A
Maximum drain current (ID)	75 A	75 A
Maximum drain-source on-resistance	0.0077 Ω	0.0077 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G4	R-PSSO-G4
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	272 W	272 W
Maximum pulsed drain current (IDM)	560 A	560 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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