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BUK9506-55B

Description
N-channel TrenchMOSTM logic level FET
File Size103KB,15 Pages
ManufacturerETC1
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BUK9506-55B Overview

N-channel TrenchMOSTM logic level FET

BUK95/96/9E06-55B
N-channel TrenchMOS™ logic level FET
Rev. 03 — 30 November 2004
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low
on-state resistance.
1.2 Features
s
TrenchMOS™ technology
s
175
°C
rated
s
Q101 compliant
s
Logic level compatible.
1.3 Applications
s
Automotive systems
s
Motors, lamps and solenoids
s
12 V and 24 V loads
s
General purpose power switching.
1.4 Quick reference data
s
E
DS(AL)S
679 mJ
s
I
D
75 A
s
R
DSon
= 5.1 mΩ (typ)
s
P
tot
258 W.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning
Description
gate (G)
drain (D)
source (S)
mounting base;
connected to drain (D)
123
3
[1]
Simplified outline
mb
mb
Symbol
mb
D
G
mbb076
S
2
1
1 2 3
SOT226 (I
2
-PAK)
SOT404 (D
2
-PAK)
SOT78 (TO-220AB)
[1]
It is not possible to make a connection to pin 2 of the SOT404 package.

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