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BUK9MPP-55PRR

Description
Dual TrenchPLUS logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size240KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BUK9MPP-55PRR Overview

Dual TrenchPLUS logic level FET

BUK9MPP-55PRR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOIC
package instructionPLASTIC, SOP-20
Contacts20
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)9.16 A
Maximum drain current (ID)9.16 A
Maximum drain-source on-resistance0.0279 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)127 pF
JEDEC-95 codeMS-013AC
JESD-30 codeR-PDSO-G20
Humidity sensitivity level3
Number of components2
Number of terminals20
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3.9 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
BUK9MPP-55PRR
Dual TrenchPLUS logic level FET
Rev. 01 — 14 May 2009
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode field-effect power transistor in SO20. Device is
manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring
very low on-state resistance, integrated current sensing transistors and over temperature
protection diodes.
1.2 Features and benefits
Integrated current sensor
Integrated temperature sensor
1.3 Applications
Lamp switching
Motor drive systems
Power distribution
Solenoid drivers
1.4 Quick reference data
Table 1.
Quick reference
Conditions
V
GS
= 5 V; I
D
= 5 A;
T
j
= 25 °C; see
Figure 16;
see
Figure 17
T
j
= 25 °C; V
GS
= 5 V; see
Figure 18
T
j
= 25 °C; V
GS
= 0 V;
I
D
= 250 µA
Min
-
Typ
21.3
Max
25
Unit
mΩ
Symbol Parameter
R
DSon
drain-source
on-state resistance
ratio of drain current
to sense current
Static characteristics, FET1 and FET2
I
D
/I
sense
5130
55
5700
-
6270
-
A/A
V
V
(BR)DSS
drain-source
breakdown voltage

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