Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With
TO-220C package
·High
voltage ,high speed
·Integrated
antiparallel
collector-emitter diode
APPLICATIONS
·Designed
for use in lighting
applications and low cost
switch-mode power supplies.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BUL128D
·
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak (t
p
<5 ms)
Base current
Base current-Peak (t
p
<5 ms)
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
700
400
9
4
8
2
4
70
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
1.78
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
CEsat-4
V
BEsat-1
V
BEsat-2
V
BEsat-3
I
CES
I
CEO
h
FE-1
h
FE-2
V
F
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
Diode forward voltage
CONDITIONS
I
C
=100mA; L=25mH
I
E
=10mA; I
C
=0
I
C
=0.5A ;I
B
=0.1A
I
C
=1A ;I
B
=0.2A
I
C
=2.5A ;I
B
=0.5A
I
C
=4A ;I
B
=1A
I
C
=0.5A ;I
B
=0.1A
I
C
=1A ;I
B
=0.2A
I
C
=2.5A ;I
B
=0.5A
V
CE
=700V; V
BE
=-1.5V
T
j
=125℃
V
CE
=400V; I
B
=0
I
C
=2A ; V
CE
=5V
I
C
=10mA ; V
CE
=5V
I
C
=2A
8
10
0.5
MIN
400
9
BUL128D
TYP.
MAX
UNIT
V
0.7
1.0
1.5
V
V
V
V
1.1
1.2
1.3
100
500
250
40
V
V
V
μA
μA
2.5
V
Switching times resistive load
t
s
t
f
Storage time
Fall time
2.9
0.2
μs
μs
V
CC
=250V ,I
C
=2A
I
B1
=-I
B2
=0.4A;t
p
=30μs
2
Analog electronics
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