INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 400V (Min)-BUP23BF
450V (Min)-BUP23CF
·High
Switching Speed
APPLICATIONS
·Designed
for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BUP23BF
BUP23CF
BUP23BF
BUP23CF
VALUE
750
V
850
400
V
450
9
15
30
6
9
37
150
-65~150
V
A
A
A
A
W
℃
℃
UNIT
BUP23BF/CF
V
CES
Collector- Emitter
Voltage(V
BE
= 0)
V
CEO
Collector-Emitter
Voltage
V
EBO
I
C
I
CM
I
B
B
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
Base Current- Continuous
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
3.4
35
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BUP23BF
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
BUP23CF
BUP23BF
V
CE
(sat)
Collector-Emitter
Saturation Voltage
BUP23CF
BUP23BF
V
BE
(sat)
Base-Emitter
Saturation Voltage
BUP23CF
I
CES
I
EBO
h
FE
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
C
= 10A; I
B
= 1.67A
V
CE
= V
CESmax
; V
BE
= 0
V
CE
= V
CESmax
; V
BE
= 0;T
J
= 125℃
V
EB
= 9V ; I
C
= 0
I
C
= 1.5A ; V
CE
= 5V
I
C
= 10A; I
B
= 1.67A
I
C
= 10A; I
B
= 1.33A
I
C
= 10A; I
B
= 1.33A
I
C
= 100mA ; I
B
= 0;L= 25mH
CONDITIONS
BUP23BF/CF
MIN
400
TYP.
MAX
UNIT
V
450
1.5
V
1.5
1.5
V
1.5
1
3
10
25
mA
mA
Switching Times, Resistive Load
t
on
t
stg
t
f
Turn-On Time
For BUP23BF
I
C
= 10A ;I
B1
= -I
B2
= 1.33A
Storage Time
For BUP23CF
I
C
= 10A ;I
B1
= -I
B2
= 1.67A
Fall Time
0.7
4.5
μs
μs
1.0
μs
isc Website：www.iscsemi.cn
2
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