SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUP52
•
•
•
Low VCE(SAT), Fast switching.
Hermetic TO3 Metal package.
Ideally suited for Motor Control, Switching
and Linear Applications
Screening Options Available
•
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCEX
VCEO
VEBO
IC
ICM
PD
TJ
Tstg
VBE = -1.5V
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Peak Collector Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
300V
200V
10V
70A
90A
300W
1.72W/°C
-55 to +200°C
-55 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
0.58
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8313
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUP52
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
ICEX
IEBO
V(BR)CEO
(1)
Parameters
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Breakdown Voltage
Collector-Emitter Saturation
Voltage
Test Conditions
VCE = 300V
VBE = -1.5V
TC = 150°C
VEB = 8V
IC = 10mA
IC = 20A
IB = 2A
IB = 4A
IB = 14A
IB = 2A
IB = 5A
IB = 15A
VCE = 4V
VCE = 4V
VCE = 4V
IC = 0
Min.
Typ
Max.
0.1
5
0.1
Units
mA
200
0.5
0.6
0.9
1.1
1.2
1.5
20
12
8
V
VCE(sat)
(1)
IC = 40A
IC = 70A
IC = 20A
VBE(sat)
(1)
Base-Emitter Saturation
Voltage
IC = 40A
IC = 70A
IC = 20A
hFE
(1)
Forward-current transfer
ratio
IC = 40A
IC = 70A
DYNAMIC CHARACTERISTICS
ts
tf
Storage Time
Fall Time
IC = 40A
IB1 = -IB2 = 10A
VCC = 200V
1.0
0.3
µs
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8313
Issue 1
Page 2 of 3
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUP52
MECHANICAL DATA
Dimensions in mm (inches)
3 9 .9 5 (1 .5 7 3 )
m a x .
3 0 .4 0 (1 .1 9 7 )
3 0 .1 5 (1 .1 8 7 )
1 7 .1 5 (0 .6 7 5 )
1 6 .6 4 (0 .6 5 5 )
2 0 .3 2 (0 .8 0 0 )
1 8 .8 0 (0 .7 4 0 )
d ia .
1 1 .1 8 (0 .4 4 0 )
1 0 .6 7 (0 .4 2 0 )
1 .7 8 (0 .0 7 0 )
1 .5 2 (0 .0 6 0 )
1 .5 7 (0 .0 6 2 )
1 .4 7 (0 .0 5 8 )
d ia .
2 p lc s .
TO3 (TO-204AE)
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
1 2 .0 7 (0 .4 7 5 )
1 1 .3 0 (0 .4 4 5 )
7 .8 7 (0 .3 1 0 )
6 .9 9 (0 .2 7 5 )
2 6 .6 7 (1 .0 5 0 )
m a x .
4 .0 9 (0 .1 6 1 )
3 .8 4 (0 .1 5 1 )
d ia .
2 p lc s .
Website:
http://www.semelab-tt.com
Document Number 8313
Issue 1
Page 3 of 3
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