INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUT46A
DESCRIPTION
·High
Voltage
·High
Speed Switching
APPLICATIONS
·General
purpose switching
·Switch
mode power supply
·Electronic
ballasts for fluorescent lighting
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1000
450
7
5
3
100
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.76
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BUT46A
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.1A; I
B
= 0
450
V
V
CE(
sat
)-1
Collector-Emitter Saturation Voltage
I
C
= 2A; I
B
= 0.4A
B
1.5
V
V
CE(
sat
)-2
Collector-Emitter Saturation Voltage
I
C
= 3A; I
B
= 0.6A
B
5.0
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 2A; I
B
= 0.4A
B
1.3
0.1
1.0
1.0
V
I
CBO
Collector Cutoff Current
V
CB
=1000V; I
E
= 0
V
CB
=1000V; I
E
= 0; T
C
=125℃
V
EB
= 7V; I
C
= 0
mA
I
EBO
Emitter Cutoff Current
mA
h
FE
DC Current Gain
I
C
= 0.5A; V
CE
= 5V
10
35
isc Website：www.iscsemi.cn
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