INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUT93
DESCRIPTION
·High
Voltage
·High
Speed Switching
·High
Power Dissipation
APPLICATIONS
·Designed
for switching mode power supply and electronic
ballast applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
600
350
5
4
6
2
50
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.5
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BUT93
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 0.1A; I
B
= 0, L= 125mH
350
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA; I
C
= 0
5
V
V
CE(
sat
)-1
Collector-Emitter Saturation Voltage
I
C
= 0.3A; I
B
= 30mA
0.5
V
V
CE(
sat
)-2
Collector-Emitter Saturation Voltage
I
C
= 3A; I
B
= 750mA
B
1.0
V
V
BE(
sat
)
I
CES
Base-Emitter Saturation Voltage
I
C
= 1A; I
B
= 0.2A
B
1.1
0.2
1.5
10
V
Collector Cutoff Current
V
CE
= 600V; V
BE
= 0
V
CE
= 600V; V
BE
= 0; T
C
=125℃
I
C
= 1A; V
CE
= 2V
mA
h
FE
DC Current Gain
f
T
Current-Gain—Bandwidth Product
I
C
= 0.5A; V
CE
= 10V
9
MHz
Switching Times ;Resistive Load
μs
t
s
Storage Time
I
C
= 1A; I
B1
= 0.2A; I
B2
= -0.4A
2.0
t
f
Fall Time
0.25
μs
isc Website：www.iscsemi.cn
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