NPN BUV23
POWER SWITCH APPLICATIONS
The BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3.
They are intended for use in power switching appications in military and industrial equipments.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
V
CER
I
C
I
CM
I
B
P
t
T
J
T
Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Ratings
I
B
= 0
I
E
= 0
I
C
= 0
V
BE
= -1.5V
R
BE
<= 100
Ω
t
p
= 10ms
@ T
C
= 25°
Value
325
400
7.0
400
390
30
40
6
250
200
-65 to +200
Unit
V
V
V
V
V
A
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Thermal Resistance, Junction to Case
Value
0.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
V
EB0(SUS)
I
CEO
I
CEX
Ratings
Collector-Emitter
Sustaining Voltage (1)
Emitter-BaseBreakdown
Voltage (1)
Collector Cutoff Current
Collector Cutoff Current
Test Condition(s)
I
C
=200 mA, L= 25mH
I
C
=0A , I
E
=50 mA
V
CE
=260 V , I
B
=0A
V
CE
= V
CEX
, V
BE
= -1.5V
V
CE
= V
CEX
, V
BE
= -1.5V, T
case
= 125°C
Min Typ Mx Unit
325
7
-
-
-
-
-
-
-
-
-
-
3
3
12
1/2
V
V
mA
mA
COMSET SEMICONDUCTORS
NPN BUV23
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
Emitter Cutoff Current
DC Current Gain (1)
Collector-Emitter
saturation Voltage (1)
Base-Emitter saturation
Voltage (1)
V
EB
=5.0 V, I
C
=0
I
C
=8 A , V
CE
=4.0 V
I
C
=16 A , V
CE
=4.0 V
I
C
=8 A , I
B
=1.6 A
I
C
=16 A , I
B
=3.2 A
I
C
=16 A , I
B
=3.2 A
-
15
8
-
-
-
-
-
-
0.2
0.35
1.15
1
60
-
0.8
1
1.5
mA
-
V
Symbol
f
T
t
on
t
s
t
f
Ratings
Transition frequency
Turn-on time
Storage time
File time
Test Condition(s)
V
CE
=15 V , I
C
=2 A , f=10 MHz
I
C
=16 A , I
B
=3.2 A
Min Typ Mx Unit
8
-
-
-
-
0.55
1.7
0.26
-
1.3
2.5
µs
1.2
MHz
I
C
=16 A
I
B1
= -I
B2
=3.2 A
(1) Pulse Duration = 300
µs,
Duty Cycle <= 2%
MECHANICAL DATA CASE TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
mm
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
4,06
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
0,77
0,04
0,16
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
2/2
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