High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast
switching applications such as high frequency and efficiency converters, switching regulators
and motor control.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
t
T
j
T
stg
Ratings
BUV27
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature range
t
p
= 10ms
85
175
t
p
= 10ms
I
E
= 0
I
B
= 0
I
C
= 0
240
120
7
12
20
4
6
85
Unit
BUV27A
300
150
7
V
V
V
A
A
A
A
W
°C
-65 to 175
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
R
thJ-mb
Ratings
From junction to mounting base
Value
1.76
Unit
°C/W
29/09/2012
COMSET SEMICONDUCTORS
13
SEMICONDUCTORS
BUV27 – BUV27A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Value
Symbol
I
CEX
I
EBO
V
CEOsust
V
EBO
Ratings
Collector Cutoff
Current (*)
Emitter Cutoff
Current
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter
saturation Voltage
Base-Emitter
Saturation Voltage
Test Condition(s)
Min
BUV27
V
CE
=V
CESMax
V
BE
= 1.5V, T
J
= 125°C BUV27A
BUV27
V
EB
= 5 V, I
C
= 0
BUV27A
BUV27
I
B
= 0 , I
C
= 0.2 A
L = 25 mH
BUV27A
BUV27
I
E
= 50 mA , I
C
= 0
BUV27A
I
C
= 4 A, I
B
= 400 mA
BUV27
I
C
= 4 A, I
B
= 400 mA
BUV27A
I
C
=8 A, I
B
= 0.8 A
BUV27
I
C
=7 A, I
B
= 0.7 A
BUV27A
I
C
=8 A, I
B
= 0.8 A
BUV27
I
C
=7 A, I
B
= 0.7 A
BUV27A
-
-
120
150
7
-
-
-
-
-
-
Unit
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
1
1
-
-
30
0.7
0.7
1.5
1.5
2
2
mA
mA
V
V
V
CE(SAT)
V
V
BE(SAT)
V
SWITCHING TIMES
Symbol
t
on
t
off
t
f
Ratings
turn-on time
turn-off time
Fall time
Test Condition(s)
Min
For BUV27
I
C
= 8 A , V
CC
= 50 V
I
B1
= 0.8 A , I
B2
= 1.6 A
For BUV27A
I
C
= 7 A , V
CC
= 50 V
I
B1
= 0.7 A , I
B2
= 1.4 A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
-
-
-
Value
Typ
0.4
0.5
0.12
Unit
Max
0.8
1.2
0.25
µs
(*) Mesured with a half-sinewave voltage (curve tracer).
29/09/2012
COMSET SEMICONDUCTORS
23
SEMICONDUCTORS
BUV27 – BUV27A
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
0,46
2,50
4,98
2.49
0,70
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Pin 1 :
Pin 2 :
Pin 3 :
Package
Base
Collector
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
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