INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUX20A
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= 125V(Min)
·High
Current Capability
·Good
Linearity of h
FE
APPLICATIONS
·Designed
for switching and linear applications in military
and industrial equipment.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO(SUS)
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@T
C
=100℃
Junction Temperature
Storage Temperature
VALUE
160
125
7
40
50
8
140
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
0.7
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)
I
CEO
I
CEX
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
CONDITIONS
I
C
= 200mA ; I
B
= 0
I
C
= 20A; I
B
= 2A
I
C
= 40A; I
B
= 4A
I
C
= 40A; I
B
= 4A
V
CE
= 100V;I
B
= 0
V
CE
= 160V;V
BE
= -1.5V
V
CE
= 160V;V
BE
= -1.5V; T
C
= 125℃
V
EB
= 8V; I
C
=0
I
C
= 20A ; V
CE
= 2V
I
C
= 40A ; V
CE
= 4V
I
C
= 2A ; V
CE
= 15V; f
test
= 10MHz
20
10
50
MIN
125
BUX20A
TYP.
MAX
UNIT
V
0.6
1.2
2.0
3.0
3.0
12
5.0
60
V
V
V
mA
mA
mA
MHz
isc Website：www.iscsemi.cn
2
Power technology
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