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BY399

Description
3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size35KB,2 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
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3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD

BY399 Parametric

Parameter NameAttribute value
MakerHY Electronic
Reach Compliance Codeunknown
Base Number Matches1
FR3/BY396 SERIES
FAST RECOVERY RECTIFIERS
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 3.0
Amperes
DO- 27
FEATURES
Fast switching for high efficiency
Low cost
Diffused junction
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
.052(1.3)
.048(1.2) DIA.
1.0(25.4)
MIN
.375(9.5)
.335(8.5)
210
MECHANICAL DATA
Case: JEDEC DO-27 molded plastic
Polarity: Color band denotes cathode
Weight: 0.04 ounces , 1.1 grams
Mounting position: Any
.220(5.6)
.197(5.0) DIA.
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25℃
@T
J
=100℃
@T
A
=75
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
FR301
50
35
50
BY396
FR302
100
70
100
BY397
FR303
200
140
200
BY398
FR304
400
280
400
3.0
FR305
600
420
600
BY399
FR306
800
560
800
FR307
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
T
RR
C
J
R
θJA
T
J
T
STG
150
65
150
1.3
5.0
100
250
40
15
-50 to +125
-50 to +150
500
A
V
uA
Maximum Reverse Recovery Time(Note 1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1.Measured with I
F
=0.5A,I
R
=1A,I
RR
=0.25A
pF
℃/W
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
3.Thermal resistance junction of ambient.
~ 55 ~

BY399 Related Products

BY399 BY398
Description 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
Reach Compliance Code unknown unknow
Base Number Matches 1 1

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