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BY458

Description
1200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size36KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BY458 Overview

1200 V, SILICON, RECTIFIER DIODE

BY458 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerVishay
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationHIGH VOLTAGE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum output current2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum reverse recovery time20 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
BY448.BY458
Vishay Telefunken
Silicon Mesa Rectifiers
Features
D
Glass passivated junction
D
Hermetically sealed package
Applications
High voltage rectifier
Efficiency diode in horizontal deflection circuits
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameters
Reverse voltage
g
Peak forward surge current
Average forward current
Junction temperature
Storage temperature range
Test Conditions
Type
BY448
BY458
Symbol
V
R
V
R
I
FSM
I
FAV
T
j
T
stg
Value
1500
1200
30
2
140
–55...+150
Unit
V
V
A
A
°
C
°
C
t
p
=10ms,
half sinewave
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board with spacing 25mm
Symbol
R
thJA
Value
100
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Total reverse recovery time
Test Conditions
I
F
=3A
V
R
=V
RSM
V
R
=V
RSM
, T
j
=140
°
C
I
F
=1A, d
iF
/d
t
=0.05A/
m
s
Type
Symbol
V
F
I
R
I
R
t
rr
Min
Typ
Max
1.6
3
140
20
Unit
V
m
A
m
A
m
s
Document Number 86006
Rev. 2, 24-Jun-98
www.vishay.de
FaxBack +1-408-970-5600
1 (3)

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BY458 BY448
Description 1200 V, SILICON, RECTIFIER DIODE 2 A, SILICON, RECTIFIER DIODE

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