BYS12–90
Vishay Telefunken
Schottky Barrier Rectifier
Features
D
D
D
D
D
High efficiency
Low power losses
Very low switching losses
Low reverse current
High surge capability
15 811
Applications
Polarity protection
Low voltage, high frequency rectifiers
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Reverse voltage
=Repetitive peak reverse voltage
Peak forward surge current
t
p
=10ms, half sinewave
Average forward current
Junction and storage temperature range
Type
Symbol
Value
Unit
V
R
90
V
=V
RRM
I
FSM
30
A
I
FAV
1.5
A
T
j
=T
stg
–55...+150
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Junction lead
T
L
=constant
Junction ambient mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm
2
35
m
m Cu
mounted on Al–oxid–ceramic (Al
2
O
3
), 50mm
2
35
m
m Cu
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Reverse current
Test Conditions
I
F
=1A
I
F
=15mA
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
°
C
Type
Symbol
V
F
V
F
I
R
I
R
Min
Typ
Max
900
360
200
2
Unit
mV
mV
m
A
mA
Document Number 86015
Rev. 2, 24-Jun-98
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BYS12–90
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
P
R
– Maximum Reverse Power Dissipation ( W )
7
I
FAV
– Average Forward Current ( A )
2.0
V
R
= 0 V, Half Sinewave
1.6
R
thJA
=25K/W
1.2
0.8
0.4
0
0
40
80
120
160
200
95 9723
6
V
R
= V
R RM
5
4
R
thJA
=25K/W
3
2
1
R
thJA
=100K/W
0
T
j
– Junction Temperature (
°C
)
100K/W
125K/W
150K/W
0
40
80
120
160
200
95 9720
T
amb
– Ambient Temperature (
°C
)
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
I
R
– Reverse Current ( mA )
I
F
– Forward Current ( A )
V
R
= V
R RM
100
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
100
T
j
= 150°C
10
10
1
T
j
= 25°C
1
0.1
0.1
0
95 9721
0.01
40
80
120
160
200
95 9724
0
0.6
1.2
1.8
2.4
3.0
T
j
– Junction Temperature (
°C
)
V
F
– Forward Voltage ( V )
Figure 2. Max. Reverse Current vs.
Junction Temperature
Figure 5. Max. Forward Current vs. Forward Voltage
I
FAV
– Average Forward Current ( A )
2.0
1.6
1.2
0.8
0.4
0
0
V
R
= V
R RM
, Half Sinewave, R
thJA
=25K/W
40
80
120
160
200
95 9722
T
amb
– Ambient Temperature (
°C
)
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
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Document Number 86015
Rev. 2, 24-Jun-98
BYS12–90
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 86015
Rev. 2, 24-Jun-98
Power technology
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