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BYT54J

Description
0.75 A, 600 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size210KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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BYT54J Overview

0.75 A, 600 V, SILICON, SIGNAL DIODE

BYT54A-BYT54M
High Efficiency Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT:
1.25
A
Features
Fast recovery times
The plastic material carries U/L recognition 94V-0
Glass passivated junction
Low cost
High surge current capability
DO -
41
Mechanical Data
Case:JEDEC DO --
41,molded
plastic
Polarity: Color band denotes cathode
Weight:
0.012ounces,0.34 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYT
54A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
10mm
lead length,
@T
A
=75
BYT
54B
100
70
100
BYT
54D
200
140
200
BYT
54G
400
280
400
1.25
BYT
54J
600
420
600
BYT
54K
800
560
800
BYT
54M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
10ms
single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30
A
Maximum instantaneous forw ard voltage
@
1.0
A
Maximum reverse current
@T
A
=25
at rated DC blocking voltage @T
A
=125
Maximum reverse recovery time (Note1)
Typical thermal resistance
(Note2)
V
F
I
R
t
rr
R
θJA
T
J
T
STG
1.5
5.0
150
100
45
- 55 ---- + 175
- 55 ---- + 175
V
A
ns
k
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2.Thermal
resistance from junction to ambient.
http://www.luguang.cn
mail:lge@luguang.cn

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BYT54J BYT54A BYT54B BYT54D BYT54G BYT54K
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