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BYT56J

Description
1.5 A, 600 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size119KB,2 Pages
ManufacturerFRONTIER
Websitehttp://www.frontierusa.com/
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BYT56J Overview

1.5 A, 600 V, SILICON, RECTIFIER DIODE

Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998
FAX: (805) 522-9989
E-mail:
frontiersales@frontierusa.com
Web:
http://www.frontierusa.com
3A ULTRA FAST RECOVERY RECTIFIER
BYT56A THRU BYT56M
FEATURES
FAST RECOVERY TIMES
UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOUND
DIFFUSED JUNCTION
LOW COST
HIGH SURGE CURRENT CAPABILITY
BEVEL ROUND CHIP, AVALANCHE OPERATION
1.0(25.4)
MIN
.052(1.3)
.048(1.2)
.375(9.5)
.335(8.5)
MECHANICAL DATA
CASE: TRANSFER MOLDED, DO201AD, DIMENSIONS
IN INCHES AND (MILLIMETERS)
LEADS: SOLDERABLE PER MIL-STD-202,METHOD 208
POLARITY: CATHODE INDICATED BY COLOR BAND
WEIGHT: 1.2 GRAMS
.220(5.6)
.197(5.0)
1.0(25.4)
MIN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED
SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD. FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%
RATINGS
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE
MAXIMUM RMS VOLTAGE
MAXIMUM DC BLOCKING VOLTAGE
MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT
0.375”(9.5mm) LEAD LENGTH AT TA=55°C
PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE HALF
SINE-WAVE SUPERIMPOSED ON RATED LOAD
TYPICAL JUNCTION CAPACITANCE (NOTE 1)
TYPICAL THERMAL RESISTANCE (NOTE 2)
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE
SYMBOL BYT56A BYT56B BYT56D BYT56G BYT56J BYT56K BYT56M UNITS
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
R
θja
T
STG
T
OP
75
20
-55 TO + 150
-55 TO + 150
50
35
50
100
70
100
200
140
200
400
280
400
3.0
150
50
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
PF
℃/W
ELECTRICAL CHARACTERISTICS (A
T
T
A
=25°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS
MAXIMUM FORWARD VOLTAGE AT I
O
DC
MAXIMUM REVERSE CURRENT AT 25℃
MAXIMUM REVERSE CURRENT AT100℃
SYMBOL BYT56A BYT56B BYT56D BYT56G BYT56J BYT56K BYT56M UNITS
V
F
I
R
I
R
1.4
5
50
V
μA
μA
nS
MAXIMUM REVERSE RECOVERY TIME (NOTE3)
T
RR
100
NOTE:
1. MEASURED AT 1 MHZ AND APPLIED REVERSE VOLTAGE OF 4.0 VOLTS
2. BOTH LEADS ATTACHED TO HEAT SINK 63.5x63.5x1t(mm) COPPER PLATE AT LEAD LENGTH 5mm
3. REVERSE RECOVERY TEST CONDITIONS: I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A
BYT56A THRU BYT56M
Page: 1

BYT56J Related Products

BYT56J BYT56A BYT56B BYT56D BYT56G BYT56K BYT56M
Description 1.5 A, 600 V, SILICON, RECTIFIER DIODE 1.5 A, 50 V, SILICON, RECTIFIER DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE 1.5 A, 200 V, SILICON, RECTIFIER DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE

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