BYV12...BYV16
Vishay Telefunken
Fast Silicon Mesa Rectifiers
Features
D
D
D
D
Glass passivated junction
Hermetically sealed package
Soft recovery characteristic
Low reverse current
Applications
Fast rectifier and switch for example for TV–line output
circuits and switch mode power supply
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Test Conditions
Type
BYV12
BYV13
BYV14
BYV15
BYV16
Symbol
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
I
FSM
I
FRM
I
FAV
T
j
=T
stg
Value
100
400
600
800
1000
40
9
1.5
–65...+175
Unit
V
V
V
V
V
A
A
A
°
C
Peak forward surge current
Repetitive peak forward current
Average forward current
Junction and storage
temperature range
T
j
= 25
_
C
Parameter
Junction ambient
t
p
=10ms,
half sinewave
ϕ=180
°
, T
amb
=25
°
C
Maximum Thermal Resistance
Test Conditions
l=10mm, T
L
=constant
on PC board with spacing 25mm
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Reverse recovery time
Reverse recovery charge
Test Conditions
I
F
=1A
V
R
=V
RRM
V
R
=V
RRM
, T
j
=150
°
C
I
F
=0.5A, I
R
=1A, i
R
=0.25A
I
F
=1A, di/dt=5A/
m
s
Type
Symbol
V
F
I
R
I
R
t
rr
Q
rr
Min
Typ
1
60
Max
1.5
5
150
300
200
Unit
V
m
A
m
A
ns
nC
Document Number 86039
Rev. 2, 24-Jun-98
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BYV12...BYV16
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
120
T
j
– Junction Temperature (
°
C )
l
100
80
60
40
20
0
0
5
10
15
20
25
30
94 9517
240
l
R
thJA
=100K/W
200
V
R RM
160
BYV12
120
BYV14
80
BYV13
40
0
1000
0
200
400
600
800
V
R
,V
RRM
– Reverse / Repetitive Peak Reverse
Voltage ( V )
BYV15
BYV16
V
R
T
L
=constant
94 9101
l – Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
1.2
I
FAV
– Average Forward Current ( A )
Figure 4. Junction Temperature vs. Reverse/Repetitive
Peak Reverse Voltage
1000
I
R
– Reverse Current (
m
A )
1.0
0.8
0.6
0.4
0.2
0
0
40
80
V
R RM
f 20kHz
R
thJA
100K/W
PCB
v
v
Scattering Limit
100
10
1
V
R
= V
R RM
0
40
80
120
160
200
0.1
120
160
200
94 9521
94 9519
T
amb
– Ambient Temperature (
°C
)
T
j
– Junction Temperature (
°C
)
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
I
FAV
– Average Forward Current ( A )
Figure 5. Reverse Current vs. Junction Temperature
100
2.0
I
F
– Forward Current ( A )
1.6
1.2
0.8
0.4
0
0
40
80
120
160
200
94 9520
V
R RM
f 20kHz
R
thJA
45K/W
L=10mm
v
v
10
1
T
j
= 175°C
0.1
T
j
= 25°C
0.01
0
1
2
3
4
T
amb
– Ambient Temperature (
°C
)
V
F
– Forward Voltage ( V )
94 9518
Figure 3. Max. Average Forward Current vs. Ambient
Temperature
Figure 6. Max. Forward Current vs. Forward Voltage
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Document Number 86039
Rev. 2, 24-Jun-98
BYV12...BYV16
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de
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Document Number 86039
Rev. 2, 24-Jun-98
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