BYV26AGP datasheet, PDF - EEWORLD Datasheet

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BYV26AGP: Description1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC; CategoryDiscrete semiconductor diode; File Size77KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/

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BYV26AGP Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC

BYV26AGP Parametric

Parameter Name	Attribute value
Maker	Gulf Semiconductor
package instruction	PLASTIC PACKAGE-2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-41
JESD-30 code	O-PALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.03 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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BYV26AGP THRU BYV26EGP

SINTERED GLASS JUNCTION

FAST SWITCHING PLASTIC RECTIFIER

VOLTAGE： 200V to 1000V

：

CURRENT: 1.0A

FEATURE

High temperature metallurgically bonded construction

Sintered glass cavity free junction

Capability of meeting environmental standard of

MIL-S-19500

High temperature soldering guaranteed

350°C /10sec/0.375”lead length at 5 lbs tension

Operate at Ta

=55°C

with no thermal run away

Typical Ir<0.1µA

DO-41

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity: color band denotes cathode

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

BYV26

AGP

200

140

200

300

BYV26

BGP

400

280

400

500

BYV26

CGP

600

420

600

700

1.0

30

2.5

10

5.0

150.0

30

15.0

55.0

-65 to +175

75

BYV26

DGP

800

560

800

900

BYV26

EGP

1000

700

1000

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

units

V

A

V

mJ

Vrrm

Vrms

Vdc

Reverse avalanche breakdown voltage

at I

R

= 0.1 mA

Maximum Average Forward Rectified

Current 3/8”lead length at Ta =55

°C

Peak Forward Surge Current 8.3ms single

half sine-wave superimposed on rated load

Maximum Forward Voltage at rated Forward

Current and 50

°C

Non-repetitive peak reverse avalanche energy

(Note 1)

Maximum DC Reverse Current

Ta =25

°C

at rated DC blocking voltage

Ta =150

°C

Maximum Reverse Recovery Time (Note 2)

Typical Junction Capacitance

Typical Thermal Resistance

(Note 3)

(Note 4)

V

(BR)R

(min)

If(av)

Ifsm

Vf

Ersm

Ir

Trr

Cj

Rθja

Tstg, Tj

1100

µ

A

µ

A

nS

pF

Storage and Operating Junction Temperature

°C

/W

°C

Note: 1.R=400mA; Tj=Tjmax prior to surge; inductive load switched off

2.Reverse Recovery Condition If

=0.5A,

Ir =1.0A, Irr =0.25A

3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted

Rev.A2

www.gulfsemi.com

BYV26AGP Related Products

	BYV26AGP	BYV26BGP	BYV26DGP	BYV26EGP	BYV26CGP
Description	1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC	1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC	1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC	sintered glass junction fast switching plastic rectifier voltage？？? 200v to 1000v current: 1.0A
Maker	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
package instruction	PLASTIC PACKAGE-2	O-PALF-W2	PLASTIC PACKAGE-2	O-PALF-W2	PLASTIC PACKAGE-2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95 code	DO-41	DO-41	DO-41	DO-41	DO-41
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	200 V	400 V	800 V	1000 V	600 V
Maximum reverse recovery time	0.03 µs	0.03 µs	0.075 µs	0.075 µs	0.03 µs
surface mount	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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