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BYV26C

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size3MB,7 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
Download Datasheet Parametric Compare View All

BYV26C Overview

SIGNAL DIODE

BYV26C Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode
BYV26 series
Fast soft-recovery
controlled avalanche rectifiers
200V-1400V
0.65A-1.05
FEATURES
28 min
k
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
Available in ammo-pack.
3.81
max
4.57
max
28 min
a
MBC880
0.81
max
SOD57
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
LIMITING VALUES
SYMBOL
PARAMETER
repetitive peak reverse voltage
BYV26A
BYV26B
V
RRM
=
V
R
BYV26C
BYV26D
BYV26E
BYV26F
BYV26G
average forward current
I
F(AV)
BYV26A to E
BYV26F and G
average forward current
I
F(AV)
BYV26A to E
BYV26F and G
repetitive peak forward current
I
FRM
BYV26A to E
BYV26F and G
SYMBOL
I
FRM
PARAMETER
repetitive peak forward current
BYV26A to E
BYV26F and G
I
FSM
E
RSM
T
stg
T
j
non-repetitive peak forward current t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
see Figs 12 and 13
I
R
= 400 mA; T
j
= T
j max
prior to
surge; inductive load switched off
CONDITIONS
T
amb
= 60
°C;
see Figs 8 and 9
−65
−65
6.0
6.4
30
10
+175
+175
A
A
A
mJ
°C
°C
CONDITIONS
MIN.
MAX.
200
400
600
800
1000
1200
1400
1.00
1.05
UNIT
V
V
V
V
V
V
V
A
A
T
tp
= 85
°C;
lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
MIN.
T
amb
= 60
°C;
PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
0.65
0.68
A
A
T
tp
= 85
°C;
see Figs 6 and 7
10.0
9.6
MAX.
A
A
UNIT
E-mail: sales@taychipst.com
1 of 7
Web Site: www.taychipst.com

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