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BYV26DGP

Description
1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC
CategoryDiscrete semiconductor    diode   
File Size30KB,2 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

BYV26DGP Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC

BYV26DGP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage800 V
surface mountNO
BYV26DGP and BYV26EGP
New Product
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Ultrafast Rectifier
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
Reverse Voltage
800 to 1000V
Forward Current
1.0A
Features
• High temperature metallurgically bonded construction
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0.
• Cavity-free glass passivated junction
• Ultrafast recovery time for high efficiency
• Low forward voltage, high current capability
• Capable of meeting environmental standards of
MIL-S-19500
• Low leakage current • High surge current capability
• Specified reverse surge capability
• High temperature soldering guaranteed: 350°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
1.0 (25.4)
min.
ed*
ent
at
P
0.140 (3.6)
0.104 (2.6)
Dia.
0.300 (7.6)
0.230 (5.8)
®
1.0 (25.4)
min.
Dimensions
in inches and
(millimeters)
Mechanical Data
Case:
JEDEC DO-204AC, molded plastic over glass body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.015 oz., 0.4 g
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306.
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length
(See Fig. 1)
Peak forward surge current 10ms single half
sine-wave superimposed on rated load
Non repetitive peak reverse energy
Typical thermal resistance
(Note 2,3)
(Note 1)
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
E
RSM
R
ΘJA
R
ΘJL
T
J
, T
STG
BYV26DGP
800
560
800
1.0
30
10
70
16
BYV26EGP
1000
700
1000
Unit
V
V
V
A
A
mj
°C/W
°C
Operating junction and storage temperature range
–65 to +175
Electrical Characteristics
Maximum instantaneous
forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
Ratings at 25°C ambient temperature unless otherwise specified.
Minimum avalanche breakdown voltage at 100µA
T
J
= 25°C
T
J
= 175°C
T
A
= 25°C
T
A
= 165°C
V
BR
V
F
I
R
t
rr
C
J
900
2.5
1.3
5.0
150
75
15
1100
V
V
µA
ns
pF
Max. reverse recovery time at I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Typical junction capacitance at 4.0V, 1MHz
Notes:
(1) Peak reverse energy measured at I
R
= 400mA, T
J
= T
J
max. on inductive load, t = 20µs
(2) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm) copper pads
(3) Thermal resistance from junction to lead at 0.375” (9.5mm) lead length with both leads attached to heatsink
Document Number 88554
07-Mar-02
www.vishay.com
1

BYV26DGP Related Products

BYV26DGP BYV26EGP
Description 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC
Is it Rohs certified? incompatible incompatible
Maker Vishay Vishay
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V
Maximum non-repetitive peak forward current 30 A 30 A
Number of components 1 1
Maximum operating temperature 175 °C 175 °C
Maximum output current 1 A 1 A
Maximum repetitive peak reverse voltage 800 V 1000 V
surface mount NO NO

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