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BYV26DGP

Description
1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC
Categorysemiconductor    Discrete semiconductor   
File Size2MB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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BYV26DGP Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC

BYV26AGP THRU BYV26EGP
SINTERED GLASS JUNCTION
FAST SWITCHING PLASTIC RECTIFIER
200V-1000V
1.0A
FEATURES
D
D
D
D
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
Operate at Ta
=55°C
with no thermal run away
Typical Ir<0.1µA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
BYV26
AGP
200
140
200
300
BYV26
BGP
400
280
400
500
BYV26
CGP
600
420
600
700
1.0
30
2.5
10
5.0
150.0
BYV26
DGP
800
560
800
900
BYV26
EGP
1000
700
1000
units
V
V
V
V
A
A
V
mJ
Vrrm
Vrms
Vdc
Reverse avalanche breakdown voltage
at I
R
= 0.1 mA
Maximum Average Forward Rectified
Current 3/8”lead length at Ta =55
°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at rated Forward
Current and 50
°C
Non-repetitive peak reverse avalanche energy
(Note 1)
Maximum DC Reverse Current
Ta =25
°C
at rated DC blocking voltage
Ta =150
°C
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance
Typical Thermal Resistance
(Note 3)
(Note 4)
V
(BR)R
(min)
If(av)
Ifsm
Vf
Ersm
Ir
Trr
Cj
Rθja
Tstg, Tj
1100
µ
A
µ
A
75
nS
pF
30
15.0
55.0
-65 to +175
Storage and Operating Junction Temperature
°C
/W
°C
Note: 1.R=400mA; Tj=Tjmax prior to surge; inductive load switched off
2.Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

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BYV26DGP BYV26AGP BYV26BGP BYV26CGP BYV26EGP
Description 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC

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