VISHAY
BYW172D / 172F / 172G
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
Features
•
•
•
•
Glass passivated junction
Hermetically sealed package
Soft recovery characteristics
Low reverse current
949588
• Low forward voltage drop
• High pulse current capability
Mechanical Data
Case:
SOD-64 Sintered glass case
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
approx. 858 mg
Applications
Fast rectification diode in S.M.P.S
Parts Table
Part
BYW172D
BYW172F
BYW172G
Type differentiation
V
R
= 200 V; I
FAV
= 3 A
V
R
= 300 V; I
FAV
= 3 A
V
R
= 400 V; I
FAV
= 3 A
SOD-64
SOD-64
SOD-64
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
see electrical characteristics
Part
BYW172D
BYW172F
BYW172G
Peak forward surge current
Average forward current
Junction and storage
temperature range
Non repetitive reverse
avalanche energy
I
(BR)R
= 1 A
t
p
= 10 ms, single half sine wave
Symbol
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FAV
T
j
= T
stg
E
R
Value
200
300
400
100
3
- 55 to + 175
20
Unit
V
V
V
A
A
°C
mJ
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing
25 mm
Symbol
R
thJA
R
thJA
Value
25
70
Unit
K/W
K/W
Document Number 86096
Rev. 1.2, 12-Aug-04
www.vishay.com
1
BYW172D / 172F / 172G
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Reverse recovery time
I
F
= 3 A
I
F
= 9 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
F
= 0.5 A, I
R
= 1 A , i
R
= 0.25 A
Test condition
Symbol
V
F
V
F
I
R
I
R
t
rr
75
Min
Typ.
Max
1.1
1.5
1
20
100
VISHAY
Unit
V
V
µA
µA
ns
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
R
thJA
- Therm. Resist. Junction/Ambient (K/W)
40
I
FAV
- Average Forward Current ( A )
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
R
thJA
= 70 K/W
PCB: d = 25 mm
30
V
R
= V
RRM
half sinewave
R
thJA
= 25 K/W
l = 10 mm
20
l
10
l
0
0
5
10
15
T
L
= constant
20
25
30
l - Lead Length ( mm )
20 40 60 80 100 120 140 160 180
T
amb
- Ambient Temperature (
°
C )
94 9466
16388
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs. Ambient Temperature
100
I
F
- Forward Current ( A )
1000
I
R
- Reverse Current (
µA
)
V
R
= V
RRM
10
T
j
= 175
°C
1
0.1
0.01
T
j
= 25° C
100
10
0.001
0
16387
1
0.5
1.0
1.5
2.0
2.5
16389
25
50
75
100
125
150
175
V
F
- Forward Voltage ( V )
T
j
- Junction Temperature (
°
C )
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
www.vishay.com
2
Document Number 86096
Rev. 1.2, 12-Aug-04
VISHAY
BYW172D / 172F / 172G
Vishay Semiconductors
P - Reverse Power Dissipation ( mW )
R
180
160
140
120
100
80
60
40
20
0
25
50
75
100
P
R
-Limit
@80 % V
R
120
C
D
- Diode Capacitance ( pF )
V
R
= V
RRM
f =1 MHz
100
80
60
40
20
0
0.1
P
R
-Limit
@100 % V
R
125
150
175
16391
1
10
100
16390
T
j
- Junction Temperature (
°
C )
V
R
- Reverse Voltage ( V )
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
Z
thp
- Thermal Resistance f. Pulse Cond. (K/W
Figure 6. Diode Capacitance vs. Reverse Voltage
1000
V
RRM
= 600 V
R
thJA
= 70 K/W
100
t
p
/T= 0.5
t
p
/T= 0.2
10
t
p
/T= 0.1
t
p
/T= 0.05
0.02
1
10
-4
t
p
/T= 0.01
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
p
- Pulse Length ( s )
10
0
10
1
10
2
I
FRM
- Repetitive Peak
Forward Current ( A )
70°C
T
amb
= 25°C
100
°C
45°C
94 9562
Figure 7. Thermal Response
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
ISO Method E
1.35 (0.053) max.
26(1.014) min.
4.0 (0.156) max.
26 (1.014) min.
94 9587
Document Number 86096
Rev. 1.2, 12-Aug-04
www.vishay.com
3
BYW172D / 172F / 172G
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 86096
Rev. 1.2, 12-Aug-04
PCB Design
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