BYW52, BYW53, BYW54, BYW55, BYW56
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Controlled avalanche characteristics
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
949539
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
APPLICATIONS
• Rectification, general purpose
PARTS TABLE
PART
BYW52
BYW53
BYW54
BYW55
BYW56
TYPE DIFFERENTIATION
V
R
= 200 V; I
FAV
= 2 A
V
R
= 400 V; I
FAV
= 2 A
V
R
= 600 V; I
FAV
= 2 A
V
R
= 800 V; I
FAV
= 2 A
V
R
= 1000 V; I
FAV
= 2 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYW52
BYW53
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
BYW54
BYW55
BYW56
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
i
2
t-rating
Junction and storage temperature
range
ϕ
= 180 °
t
p
= 20 μs half sine wave, T
j
= 175 °C
l
(BR)R
= 1 A, T
j
= 175 °C
t
p
= 10 ms, half sine wave
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
FAV
P
R
E
R
i
2
t
T
j
= T
stg
VALUE
200
400
600
800
1000
50
12
2
1000
20
8
- 55 to + 175
UNIT
V
V
V
V
V
A
A
A
W
mJ
A
2
s
°C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
Document Number: 86049
Rev. 1.7, 25-Aug-10
www.vishay.com
158
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
BYW52, BYW53, BYW54, BYW55, BYW56
Standard Avalanche Sinterglass
Diode
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
TEST CONDITION
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
R
= 100 μA, t
p
/T = 0.01, t
p
= 0.3 ms
V
R
= 4 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A, dI/dt = 5 A/μs, V
R
= 50 V
l
F
= 1 A, dI/dt = 5 A/μs
SYMBOL
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
Q
rr
MIN.
-
-
-
-
-
-
-
-
TYP.
0.9
0.1
5
-
18
-
-
-
MAX
1
1
10
1600
-
4
4
200
UNIT
V
μA
μA
V
pF
μs
μs
nC
TYPICAL CHARACTERISTICS
(T
amb
= 25
°C,
unless otherwise specified)
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
120
I
FAV
- Average Forward Current (A)
l
100
80
l
2.5
V
R
= V
RRM
half
sine
wave
2.0
T
L
= constant
60
40
20
0
0
949101
1.5
R
thJA
= 45 K/W
l = 10 mm
1.0
0.5
R
thJA
= 100 K/W
PCB: d = 25 mm
0.0
5
10
15
20
25
30
16351
0
20
40
60
80 100 120 140 160 180
l - Lead Length (mm)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs.
Ambient Temperature
10
T
j
= 175 °C
1000
V
R
= V
RRM
1
T
j
= 25 °C
0.1
I
R
- Reverse Current (μA)
1.6
I
F
- Forward Current (A)
100
10
0.01
0.001
0.0
16350
1
0.4
0.8
1.2
25
16352
50
75
100
125
150
175
V
F
- Forward Voltage (V)
T
j
- Junction Temperature (°C)
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 4 - Reverse Current vs. Junction Temperature
Document Number: 86049
Rev. 1.7, 25-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
159
BYW52, BYW53, BYW54, BYW55, BYW56
Vishay Semiconductors
Standard Avalanche Sinterglass
Diode
P
R
- Reverse Power Dissipation (mW)
400
V
R
= V
RRM
40
300
P
R
- Limit at 100 % V
R
250
200
150
P
R
- Limit at 80 % V
R
100
50
0
25
50
75
100
125
150
175
C
D
- Diode Capacitance (pF)
350
35
30
25
20
15
10
5
0
0.1
1
10
f = 1 MHz
16353
100
T
j
- Junction Temperature (°C)
16354
V
R
- Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
V
RRM
= 1000 V, R
thJA
= 100 K/W
Z
thp
- Thermal Resistance
for Pulse Cond. (K/W)
100
t
p
/T = 0.5
t
p
/T = 0.2
10
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
1
t
p
/T = 0.01
10
-4
10
-3
10
-2
10
-1
10
0
10
1
T
amb
= 60 °C
T
amb
= 70 °C
T
amb
= 100 °C
1
10
100
T
amb
= 25 °C
T
amb
= 45 °C
10
-5
94 9178
t
p
- Pulse Length (s)
I
FRM
- Repetitive Peak
Forward Current (A)
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
www.vishay.com
160
3.6 (0.142) max.
20543
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86049
Rev. 1.7, 25-Aug-10
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Vishay
Disclaimer
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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