BYW52 / 53 / 54 / 55 / 56
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
Features
•
•
•
•
•
•
•
Controlled avalanche characteristics
Glass passivated junction
e2
Hermetically sealed package
Low reverse current
High surge current loading
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
949539
Applications
Rectification, general purpose
Mechanical Data
Case:
SOD-57 Sintered glass case
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
approx. 369 mg
Parts Table
Part
BYW52
BYW53
BYW54
BYW55
BYW56
Type differentiation
V
R
= 200 V; I
FAV
= 2 A
V
R
= 400 V; I
FAV
= 2 A
V
R
= 600 V; I
FAV
= 2 A
V
R
= 800 V; I
FAV
= 2 A
V
R
= 1000 V; I
FAV
= 2 A
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
see electrical characteristics
Part
BYW52
BYW53
BYW54
BYW55
BYW56
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
ϕ
= 180 °
t
p
= 20
µs
half sine wave,
T
j
= 175 °C
t
p
= 10 ms, half sinewave
Symbol
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
FAV
P
R
Value
200
400
600
800
1000
50
12
2
1000
Unit
V
V
V
V
V
A
A
A
W
Document Number 86049
Rev. 1.6, 14-Apr-05
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BYW52 / 53 / 54 / 55 / 56
Vishay Semiconductors
Parameter
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
i
2
* t-rating
Junction and storage
temperature range
Test condition
I
(BR)R
= 1 A, T
j
= 175 °C
Part
Symbol
E
R
Value
20
Unit
mJ
i
2
*t
T
j
= T
stg
8
- 55 to + 175
A
2
*s
°C
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing
25 mm
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
R
= 100
µA,
t
p
/T = 0.01,
t
p
= 0.3 ms
V
R
= 4 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A, di/dt = 5 A/µs, V
R
= 50 V
I
F
= 1 A, di/dt = 5 A/µs
Test condition
Symbol
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
Q
rr
18
4
4
200
Min
Typ.
0.9
0.1
5
Max
1.0
1
10
1600
Unit
V
µA
µA
V
pF
µs
µs
nC
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
R
thJA
Therm. Resist. Junction/Ambient (K/W)
120
l
100
– Forward Current (A)
l
10.000
80
60
40
20
0
0
5
10
15
20
25
30
l - Lead Length ( mm )
T
L
= constant
1.000
T
j
= 175 °C
0.100
T
j
= 25 °C
94 9101
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
16350
V
F
– Forward Voltage ( V )
Figure 1. Typ. Thermal Resistance vs. Lead Length
I
F
0.010
Figure 2. Forward Current vs. Forward Voltage
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2
Document Number 86049
Rev. 1.6, 14-Apr-05
BYW52 / 53 / 54 / 55 / 56
Vishay Semiconductors
I
FAV
–Average Forward Current( A )
V
R
= V
RRM
half sinewave
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80 100 120 140 160 180
T
amb
– Ambient Temperature (°C )
R
thJA
= 45 K/W
l = 10 mm
P – Reverse Power Dissipation ( mW )
R
2.5
400
350
300
250
200
150
100
50
0
25
50
75
100 125 150 175
T
j
– Junction Temperature ( °C )
P
R
–Limit
@100 % V
R
V
R
= V
RRM
P
R
–Limit
@80 % V
R
R
thJA
= 100 K/W
PCB: d = 25 mm
16351
16353
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
C
D
– Diode Capacitance ( pF )
40
V
R
= V
RRM
35
30
25
20
15
10
5
0
0.1
16354
f = 1 MHz
I
R
– Reverse Current (A)
100
10
1
25
16352
50
75
100 125 150 175
T
j
– Junction Temperature (°C )
1.0
10.0
V
R
– Reverse Voltage ( V )
100.0
Figure 4. Reverse Current vs. Junction Temperature
Z
thp
–Thermal Resistance for PulseCond.(K/W)
Figure 6. Diode Capacitance vs. Reverse Voltage
1000
V
RRM
= 1000 V, R
thJA
= 100K/W
100
t
p
/T = 0.5
t
p
/T = 0.2
10
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
t
p
/T = 0.01
1
10
–5
10
–4
T
amb
= 60 °C
T
amb
= 70°C
T
amb
= 100°C
10
–3
10
–2
10
–1
10
0
10
1
10
0
10
1
10
2
I
FRM
– Repetitive Peak
Forward Current ( A )
T
amb
= 25°C
T
amb
= 45°C
94 9178
t
p
– Pulse Length ( s )
Figure 7. Thermal Response
Document Number 86049
Rev. 1.6, 14-Apr-05
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3
BYW52 / 53 / 54 / 55 / 56
Vishay Semiconductors
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-57
3.6 (0.140)max.
Cathode Identification
ISO Method E
94 9538
0.82 (0.032) max.
26(1.014) min.
4.0 (0.156) max.
26(1.014) min.
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Document Number 86049
Rev. 1.6, 14-Apr-05
BYW52 / 53 / 54 / 55 / 56
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 86049
Rev. 1.6, 14-Apr-05
www.vishay.com
5
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