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BZW04P85B

Description
400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
CategoryDiscrete semiconductor    diode   
File Size392KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BZW04P85B Overview

400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL

BZW04P85B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknow
Breakdown voltage nominal value100 V
Maximum clamping voltage137 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee0
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage86 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
BZW04P-5V8 thru BZW04-376
www.vishay.com
Vishay General Semiconductor
TransZorb
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-204AL (DO-41)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
5.8 V to 376 V
400 W
1.5 W
40 A
175 °C
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial and telecommunication.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
BZW04-213(B) ~ BZW04-376(B) for commercial grade only
DEVICES FOR BI-DIRECTION APPLICATIONS
For
bi-directional
BZW04P-6V4B).
types,
use
B
suffix
(e.g.
Electrical characteristics apply in both directions.
Polarity:
For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
(T
A
= 25 °C unles otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs
waveform
(1)
(fig. 1)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
400
See next
table
1.5
40
3.5/5.0
- 55 to + 175
UNIT
W
A
W
A
V
°C
Peak pulse current with a 10/1000 μs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only
(2)
Maximum instantaneous forward voltage at 25 A for uni-directional only
(3)
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)
V = 3.5 V for BZW04P(-)188 and below; V = 5.0 V for BZW04P(-)213 and above
F
F
Revision: 12-Jul-11
Document Number: 88316
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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