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BZW06-33B

Description
600 W, BIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size1MB,3 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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BZW06-33B Overview

600 W, BIDIRECTIONAL, SILICON, TVS DIODE

BZW06-5V8/376
BZW06-5V8B/376B
Voltage regulator dides
10.5V-603V
0.8A-38A
FEATURES
s
s
s
s
s
s
PEAK PULSE POWER : 400 W (10/1000µs)
STAND-OFF VOLTAGE RANGE :
From 5.8V to 376 V
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Symbol
P
PP
P
I
FSM
Parameter
Peak pulse power dissipation (see note 1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current
for unidirectional types
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s a 5mm
from case.
Tj initial = Tamb
T
amb
= 75°C
tp = 10ms
Tj initial = T
amb
Value
600
1.7
100
Unit
W
W
A
T
stg
T
j
T
L
- 65 to + 175
175
230
°C
°C
°C
Note 1
: For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
R
th (j-l)
R
th (j-a)
Junction to leads
Junction to ambient on printed circuit.
L
lead
= 10 mm
Parameter
Value
60
100
Unit
°C/W
°C/W
E-mail: sales@taychipst.com
1 of 3
Web Site: www.taychipst.com

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