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BZX84J-B3V3

Description
3.3 V, 0.55 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size108KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BZX84J-B3V3 Overview

3.3 V, 0.55 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZX84J-B3V3 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-90
package instructionPLASTIC, SC-90, 2 PIN
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance95 Ω
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.55 W
Certification statusNot Qualified
Nominal reference voltage3.3 V
surface mountYES
technologyZENER
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
Maximum voltage tolerance2%
Working test current5 mA
Base Number Matches1
SO
D3
23F
BZX84J series
Single Zener diodes
Rev. 2 — 1 August 2011
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Non-repetitive peak reverse power
dissipation:
40 W
Total power dissipation:
550 mW
AEC-Q101 qualified
Small plastic package suitable for
surface-mounted design
Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
Two tolerance series:
2
% and
5
%
Low differential resistance
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
ZSM
[1]
[2]
Quick reference data
Parameter
forward voltage
non-repetitive peak reverse
power dissipation
Conditions
I
F
= 100 mA
[1]
[2]
Min
-
-
Typ
-
-
Max
1.1
40
Unit
V
W
Pulse test: t
p
300
s;  
0.02.
t
p
= 100
s;
square wave; T
j
= 25
C
prior to surge
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Symbol
1
2
006aaa152
[1]
The marking bar indicates the cathode.
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