PHOTODIODE
Si PIN photodiode
S5980, S5981, S5870
Multi-element photodiodes for surface mounting
Features
S5980: 5 × 5 mm
S5981: 10 × 10 mm
S5870: 10 × 10 mm
l
Chip carrier package suitable for surface mounting
Facilitates automated surface mounting by solder reflow
l
Thin package: 1.26 mmt
l
Photo sensitivity: 0.72 A/W (λ=960 nm)
s
General ratings
Parameter
Symbol
Window material
-
G ap betw een elem ents
-
Active area
A
S5980
Applications
l
Large active area
l
Laser beam axis alignment
l
Level meters
l
Pointing devices, etc.
□
5.0/4 elements
S5981
Resin coating
30
□
10.0/4 elements
S5870
□
10.0/2 elements
Unit
-
µm
mm
s
Absolute maximum ratings
Parameter
Symbol
Reverse voltage
V
R
Max.
O perating tem perature
Topr
Storage temperature Tstg
S5980
S5981
30
-40 to +100
-40 to +125
S5870
Unit
V
°C
°C
s
Electrical and optical characteristics (Ta=25
°C,
per 1 element)
Parameter
Symbol
Condition
S5980
Typ.
320 to 1100
Max.
-
-
-
2
-
-
-
-
S5981
Typ.
320 to 1100
960
0.72
0.6
1.15
20
35
1.9 × 10
-14
Max.
-
-
-
4
-
-
-
-
S5870
Typ.
320 to 1100
960
0.72
2
1.15
10
50
3.5 × 10
-14
Max.
-
-
-
10
-
-
-
-
Unit
nm
nm
A/W
nA
times/°C
MHz
pF
W/Hz
1/2
Spectral response range
λ
Peak sensitivity
960
λp
wavelength
Photo sensitivity
S
0.72
λ=λp
Dark current
I
D
V
R
=10 V
0.3
D
CID
Tem perature coefficient of I
T
1.15
V
R
=10 V, R
L
=50
Ω,
-3 dB
Cut-off frequency
fc
25
Term inal capacitance
Ct
V
R
=10 V, f=1 MHz
10
N oise equivalent power NEP V
R
=10 V,
λ=λp
1.4 × 10
-14
Note) S5980: For mass production, order unit is 100 pieces.
S5981, S5870: For mass production, order unit is 50 pieces.
Precautions for use
q
The light input window of this product uses soft silicone resin. Avoid touching the window to keep it from grime and damage that
can decrease sensitivity. External force applied to the resin surface may deform or cut off the wires, so do not touch the window
to prevent such troubles.
q
Use rosin flux when soldering, to prevent the terminal lead corrosion. Reflow oven temperature should be at 260 °C maximum for 5
seconds maximum time under the conditions that no moisture absorption occurs.
Reflow soldering conditions differ depending on the type of PC board and reflow oven. Carefully check these conditions before use.
q
Silicone resin swells when it absorbs organic solvent, so do not use any solvent other than alcohol.
q
Avoid unpacking until you actually use this product to prevent the terminals from oxidation and dust deposits or the coated resin
from absorbing moisture.
When the product is stored for 3 months while not unpacked or 24 hours have elapsed after unpacking, perform baking in
nitrogen atmosphere at 150 °C for 3 to 5 hours or at 120 °C for 12 to 15 hours before use.
1
Si PIN photodiode
s
Spectral response
0.8
0.7
(Typ. Ta=25 ˚C)
S5980, S5981, S5870
10 nA
(Typ. Ta=25 ˚C)
s
Photo sensitivity temperature characteristic
s
Dark current vs. reverse voltage
+1.5
(Typ. )
TEMPERATURE COEFFICIENT
(%/˚C)
S5870
+1.0
PHOTO SENSITIVITY
(A/W)
0.6
0.5
0.4
0.3
0.2
0.1
1 nA
DARK CURRENT
S5981
+0.5
100 pA
S5980
0
10 pA
200
400
600
800
1000
-0.5
190
400
600
800
1000
1 pA
0.01
0.1
1
10
100
WAVELENGTH
(nm)
KMPDB0122EA
WAVELENGTH
(nm)
KMPDB0123EA
REVERSE VOLTAGE (V)
KMPDB0124EA
s
Terminal capacitance vs. reverse voltage
1 nF
s
Dimensional outlines (unit: mm)
S5980
8.8 ± 0.2
(Typ. Ta=25 ˚C, f=1 MHz)
S5981
S5870
TERMINAL CAPACITANCE
10.6 ± 0.2
a
b
d
c
0.03
0.03
100 pF
(4
×)
R0.3
ACTIVE AREA
10 pF
1 pF
0.46
PHOTOSENSITIVE
SURFACE
SILICONE
RESIN
1.26 ± 0.15
S5980
INDEX MARK
DETAILS OF
ACTIVE AREA
100 fF
0.1
1
10
100
REVERSE VOLTAGE
(V)
KMPDB0125EA
(10
×)
0.6
1.27
ANODE b
NC
CATHODE COMMON
NC
ANODE c
ANODE d
NC
NC
NC
ANODE a
Burrs shall protrude no more than 0.3 mm on
any side of package.
KMPDA0036EB
S5981
14.5 ± 0.2
(4
×)
R0.3
ACTIVE AREA
16.5 ± 0.2
10.0
S5870
14.5 ± 0.2
(4
×)
R0.3
ACTIVE AREA
16.5 ± 0.2
a
b
b
c
0.03
1.26 ± 0.15
0.46
1.8
1.8
2.54
2.54
Burrs shall protrude no more than 0.3 mm on
any side of package.
KMPDA0037EA
Burrs shall protrude no more than 0.3 mm on
any side of package.
KMPDA0113EA
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
1.8
(10
×)
1.2
ANODE b
NC
CATHODE COMMON
NC
ANODE c
ANODE d
NC
NC
NC
ANODE a
1.8
0.46
PHOTOSENSITIVE
SURFACE
SILICONE
RESIN
DETAILS OF
ACTIVE AREA
1.26 ± 0.15
0.03
DETAILS OF
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
SILICONE
RESIN
(10
×)
1.2
NC
ANODE a
CATHODE COMMON
ANODE b
NC
NC
NC
NC
NC
NC
3.0
3.0
10.0
a
d
0.03
1.5
1.5
2.5
2
5.0
Cat. No. KPIN1012E04
Jun. 2010 DN
PCB Design
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