PD-97260A
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number
IRHLQ77214
IRHLQ73214
Radiation Level R
DS(on)
100K Rads (Si)
1.0Ω
300K Rads (Si)
1.0Ω
I
D
2.6A
2.6A
2N7615U6
IRHLQ77214
250V, Quad N-CHANNEL
TECHNOLOGY
LCC-28
International Rectifier’s R7
TM
Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 4.5V, TC = 25°C
ID @ VGS = 4.5V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
2.6
1.6
10.4
12
0.1
±10
38.5
2.6
1.2
5.56
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
0.89 (Typical)
g
For footnotes refer to the last page
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1
02/03/11
IRHLQ77214, 2N7615U6
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Per Die)
(Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆V
GS(th) /∆T J Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
250
—
—
1.0
—
2.5
—
Typ Max Units
—
0.25
—
—
-5.3
—
—
—
—
—
—
—
—
—
—
—
—
6.1
605
62
0.7
8.0
—
—
1.0
2.0
—
—
1.0
10
100
-100
18
5.0
12
27
57
45
55
—
—
—
—
—
V
V/°C
Ω
V
mV/°C
S
µA
nA
nC
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 4.5V, ID = 1.6A
VDS = VGS, ID = 250µA
VDS = 15V, IDS = 1.6A
Ã
VDS= 200V ,VGS= 0V
VDS = 200V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 2.6A
VDS = 125V
VDD = 125V, ID = 2.6A,
VGS = 5.0V, RG = 7.5Ω
Ã
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
C iss
C oss
C rss
Rg
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ns
nH
pF
Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
2.6
10.4
1.2
371
858
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 2.6A, VGS = 0V
Ã
Tj = 25°C, IF = 2.6A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJ-PCB
RthJA
Junction-to-PCB
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
10.4
90
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHLQ77214, 2N7615U6
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
(Per Die)
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source On-state
Resistance (LCC-28)
Diode Forward Voltage
Up to 300K Rads (Si)
1
Min
250
1.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V
V
GS
= -10V
V
DS
= 200V, V
GS
=0V
V
GS
= 4.5V, I
D
= 1.6A
V
GS
= 4.5V, I
D
= 1.6A
V
GS
= 0V, I
D
= 2.6A
—
2.0
100
-100
10
0.85
1.0
1.2
1. Part numbers IRHLQ77214, IRHLQ73214
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm
2
))
38 ± 5%
62 ± 5%
85 ± 5%
Energy
(MeV)
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
Range
(µm)
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
@VGS=
@VGS=
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
0V
250
250
250
-2V
250
250
250
-4V
250
250
250
-5V
250
250
250
-6V
250
250
-
-7V
250
-
-
300
250
200
150
100
50
0
0
-1
-2
-3
-4
-5
-6
-7
Bias VGS (Volts)
Bias VDS (Volts)
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHLQ77214, 2N7615U6
Pre-Irradiation
100
VGS
10V
5.0V
4.5V
3.25V
2.75V
2.5V
2.25V
BOTTOM 2.0V
TOP
100
VGS
10V
5.0V
4.5V
3.25V
2.75V
2.5V
2.25V
BOTTOM 2.0V
TOP
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
2.0V
1
1
2.0V
60µs PULSE WIDTH
T j = 25°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 2.6A
2.0
ID, Drain-to-Source Current (A)
10
T J = 150°C
1
T J = 25°C
0.1
VDS = 50V
60µs PULSE WIDTH
15
0.01
1
1.5
2
2.5
3
3.5
VGS, Gate-to-Source Voltage (V)
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHLQ77214, 2N7615U6
RDS(on), Drain-to -Source On Resistance
(Ω)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
2
4
6
8
ID = 2.6A
RDS(on), Drain-to -Source On Resistance (
Ω)
5
3
2.5
T J = 150°C
2
T J = 150°C
1.5
T J = 25°C
1
Vgs = 4.5V
0.5
0
1
2
3
4
5
6
7
ID, Drain Current (A)
T J = 25°C
10
12
VGS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs
Gate Voltage
Fig 6.
Typical On-Resistance Vs
Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
320
2.5
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
300
2.0
1.5
280
1.0
260
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
240
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
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