PD-95813H
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (UB)
Product Summary
IRHLUB770Z4
JANSR2N7616UB
60V, N-CHANNEL
REF: MIL-PRF-19500/744
TECHNOLOGY
Part Number
Radiation Level R
DS(on)
I
D
QPL Part Number
IRHLUB770Z4 100K Rads (Si)
0.68Ω 0.8A JANSR2N7616UB
IRHLUB730Z4 300K Rads (Si) 0.68Ω 0.8A JANSF2N7616UB
Refer to Page 11 for 3 Additional Part Numbers -
IRHLUBN770Z4, IRHLUBC770Z4, IRHLUBCN770Z4
UB
(SHIELDED METAL LID)
Features
:
International Rectifier’s R7 Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments. The threshold voltage remains within acceptable
operating limits over the full operating temperature and post
radiation. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
These devices are used in applications such as current boost
low signal source in PWM, voltage comparator and operational
amplifiers.
TM
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLUB7970Z4, IRHLUBN7970Z4
IRHLUBC7970Z4 & IRHLUBCN7970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ V GS = 4.5V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
0.8
0.5
3.2
0.6
0.005
±10
26.6
0.8
0.06
4.0
-55 to 150
300 (for 5s)
43 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
mg
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1
11/15/12
IRHLUB770Z4, JANSR2N7616UB
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
Min
60
Typ Max Units
—
0.07
—
—
-4.04
—
—
—
—
—
—
—
—
—
—
—
—
8.4
166
42
3.5
—
—
0.68
2.0
—
—
1.0
10
100
-100
3.6
1.5
1.8
8.0
24
30
13
—
—
—
—
14
V
V/°C
Ω
V
mV/°C
S
µA
nA
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 4.5V, ID = 0.5A
Ã
VDS = VGS, ID = 250µA
VDS = 10V, IDS = 0.5A
Ã
VDS= 48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 0.8A
VDS = 30V
VDD = 30V, ID = 0.8A,
VGS = 5.0V, RG = 24Ω
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
1.0
Gate Threshold Voltage Coefficient
—
∆V
GS(th)/∆TJ
gfs
Forward Transconductance
0.23
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Ciss
C oss
C rss
Rg
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
—
—
—
—
—
—
—
—
—
—
nC
ns
nH
pF
Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 100KHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
0.8
3.2
1.2
78
75
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 0.8A, VGS = 0V
Tj = 25°C, IF = 0.8A, di/dt
≤
100A/µs
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
200
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Pre-Irradiation
Radiation Characteristics
IRHLUB770Z4, JANSR2N7616UB
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (UB)
Diode Forward Voltage
Up to 300K Rads (Si)
1
Min
60
1.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V
V
GS
= -10V
V
DS
= 48V, V
GS
= 0V
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 0V, I
D
= 0.8A
—
2.0
100
-100
1.0
0.55
0.68
1.2
1. Part Numbers IRHLUB770Z4, IRHLUB730Z4 and additional part numbers listed on page 11.
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
38 ± 5%
62 ± 5%
85 ± 5%
2
Energy
(MeV)
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
Range
(µm)
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
@VGS=
@VGS=
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
0V
60
60
60
-2V
60
60
60
-4V
60
60
60
-5V
60
60
40
-6V
60
30
-
-7V
35
-
-
70
60
50
40
30
20
10
0
0
-1
-2
-3
VGS
-4
-5
-6
-7
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
For footnotes refer to the last page
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VDS
Fig a.
Typical Single Event Effect, Safe Operating Area
3
IRHLUB770Z4, JANSR2N7616UB
Pre-Irradiation
10
VGS
TOP
10V
4.5V
3.5V
3.0V
2.75V
2.5V
2.25V
BOTTOM 2.0V
10
VGS
10V
4.5V
3.5V
3.0V
2.75V
2.5V
2.25V
BOTTOM 2.0V
TOP
ID, Drain-to-Source Current (A)
1
ID, Drain-to-Source Current (A)
1
0.1
2.0V
60µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
2.0V
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.01
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 0.8A
1.5
ID, Drain-to-Source Current (A)
1
T J = 150°C
T J = 25°C
0.1
1.0
0.5
0.01
1.0
1.5
2.0
VDS = 25V
15
60µs PULSE WIDTH
2.5
3.0
3.5
4.0
VGS = 4.5V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHLUB770Z4, JANSR2N7616UB
RDS(on), Drain-to -Source On Resistance
(Ω)
1.4
1.2
1.0
0.8
0.6
0.4
T J = 25°C
0.2
2
3
4
5
6
7
8
ID = 0.8A
RDS(on), Drain-to -Source On Resistance (
Ω)
1.6
1.0
0.8
T J = 150°C
T J = 150°C
0.6
0.4
TJ = 25°C
Vgs = 4.5V
9
10 11 12
0.2
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs
Gate Voltage
Fig 6.
Typical On-Resistance Vs
Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
75
3.0
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
70
2.5
2.0
65
1.5
1.0
60
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
-60 -40 -20
0
20
40
60
80 100 120 140 160
55
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
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