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IRHLUC770Z4_15

Description
Simple Drive Requirements
File Size200KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Compare View All

IRHLUC770Z4_15 Overview

Simple Drive Requirements

PD-97573
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (LCC-6)
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHLUC770Z4 100K Rads (Si) 0.75Ω 0.89A
IRHLUC730Z4 300K Rads (Si)
0.75Ω
0.89A
2N7617UC
IRHLUC770Z4
60V, DUAL-N CHANNEL
TECHNOLOGY
™
International Rectifier’s R7
TM
Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
LCC-6
Features:
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLUC7970Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting SurfaceTemp
Weight
For footnotes refer to the last page
0.89
0.56
3.56
1.0
0.01
±10
20
0.89
0.1
4.7
-55 to 150
300 (for 5s)
0.2 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°
C
g
www.irf.com
1
10/18/10

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