PD-97574
2N7627UC
IRHLUC7970Z4
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (LCC-6)
Product Summary
Part Number
Radiation Level R
DS(on)
I
D
IRHLUC7970Z4 100K Rads (Si) 1.60Ω -0.65A
IRHLUC7930Z4 300K Rads (Si)
1.60Ω -0.65A
60V, DUAL P-CHANNEL
TECHNOLOGY
International Rectifier’s R7
TM
Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
LCC-6
Features:
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary N-Channel Available -
IRHLUC770Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = -4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = -4.5V,TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting SurfaceTemp
Weight
For footnotes refer to the last page
-0.65
-0.41
-2.6
1.0
0.01
±10
34
-0.65
0.1
-5.6
-55 to 150
300 (for 5s)
0.2 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°
C
g
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1
10/11/10
IRHLUC7970Z4, 2N7627UC
Electrical Characteristics For P-Channel Die @Tj = 25°C
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
-60
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-1.0
—
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
0.5
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
-0.06
—
—
3.6
—
—
—
—
—
—
—
—
—
—
—
—
33
—
—
1.60
-2.0
—
—
-1.0
-10
-100
100
3.6
1.5
1.8
23
22
32
26
—
Pre-Irradiation
(Unless Otherwise specified)
Typ Max Units
V
V/°C
Ω
V
mV/°C
S
µA
nA
nC
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
VGS = -4.5V, ID = -0.41A
VDS = VGS, ID = -250µA
VDS = -10V, IDS = -0.41A
Ã
VDS= -48V ,VGS= 0V
VDS = -48V,
VGS = 0V, TJ =125°C
VGS = -10V
VGS = 10V
VGS = -4.5V, ID = -0.65A
VDS = -30V
VDD = -30V, ID = -0.65A,
VGS = -5.0V, RG = 24Ω
Ã
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
f = 1.0MHz
f = 1.0MHz, open drain
Ciss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
—
147
46
8.1
52
—
—
—
—
pF
Ω
Source-Drain Diode Ratings and Characteristics (Per P Channel Die)
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-0.65
-2.6
-5.0
35
9.8
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = -0.65A, VGS = 0V
Ã
Tj = 25°C, IF = -0.65A, di/dt
≤
-100A/µs
VDD
≤
-25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per P Channel Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
125
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHLUC7970Z4, 2N7627UC
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For P-Channel Device @Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (LCC-6)
Diode Forward Voltage
Upto 300K Rads (Si)
1
Min
-60
-1.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -250µA
V
GS
= V
DS
, I
D
= -250µA
V
GS
= -10V
V
GS
= 10V
V
DS
= -48V, V
GS
= 0V
V
GS
= -4.5V, I
D
= -0.41A
V
GS
= -4.5V, I
D
= -0.41A
V
GS
= 0V, I
D
= -0.65A
—
-2.0
-100
100
-1.0
1.40
1.60
-5.0
1. Part numbers IRHLUC7970Z4, IRHLUC7930Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
38 ± 5%
62 ± 5%
85 ± 5%
2
Energy
(MeV)
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
Range
(µm)
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
@VGS=
@VGS=
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
0V
-60
-60
-60
2V
-60
-60
-60
4V
-60
-60
-60
5V
-60
-60
-60
6V
-60
-60
-
7V
-50
-
-
-70
-60
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
7
Bias VGS (V)
Bias VDS (V)
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHLUC7970Z4, 2N7627UC
Pre-Irradiation
10
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
VGS
TOP
-10V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.25V
BOTTOM -2..0V
10
VGS
-10V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.25V
BOTTOM -2..0V
TOP
1
1
0.1
-2.0V
-2.0V
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
60µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.01
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
2.0
T J = 25°C
T J = 150°C
1
RDS(on) , Drain-to-Source On Resistance
ID = -0.65A
-I D, Drain-to-Source Current (
Α)
1.5
(Normalized)
1.0
VDS = -25V
6
0µ
s PULSE WIDTH
0.1
2
2.5
3
3.5
4
4.5
-V GS, Gate-to-Source Voltage (V)
VGS = -4.5V
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHLUC7970Z4, 2N7627UC
RDS(on), Drain-to -Source On Resistance (
Ω)
3.5
3
2.5
2
1.5
1
0.5
0
2
3
4
5
6
7
8
ID = -0.65A
RDS(on), Drain-to -Source On Resistance (
Ω)
4
3.2
2.8
2.4
T J = 150°C
2.0
1.6
1.2
0.8
0
0.5
1.0
1.5
2.0
2.5
3.0
-I D, Drain Current (A)
T J = 150°C
T J = 25°C
T J = 25°C
Vgs = -4.5V
9
10 11 12
-V GS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs
Gate Voltage
Fig 6.
Typical On-Resistance Vs
Drain Current
-V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
80
2.5
-V GS(th) Gate threshold Voltage (V)
ID = -1.0mA
2.0
70
1.5
1.0
60
ID = -50µA
0.5
ID = -250µA
ID = -1.0mA
ID = -150mA
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
50
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
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