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KDZ6.8DE

Description
7.05 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size357KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

KDZ6.8DE Overview

7.05 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

KDZ6.8DE Parametric

Parameter NameAttribute value
MakerKEC
package instructionR-PDSO-F2
Contacts2
Manufacturer packaging codeESC
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.15 W
Certification statusNot Qualified
Nominal reference voltage6.8 V
surface mountYES
technologyZENER
Terminal formFLAT
Terminal locationDUAL
Maximum voltage tolerance5%
Working test current5 mA
SEMICONDUCTOR
TECHNICAL DATA
CONSTANT VOLTAGE REGULATION APPLICATION.
KDZ6.8DE
ZENER DIODE
SILICON EPITAXIAL PLANAR DIODE
FEATURES
・Small
package for portable electronics.
・Normal
Voltage Tolerance About
±5%.
・Low
leakage current.
CATHODE MARK
C
1
E
2
D
F
APPLICATIONS
・Cell
phone handsets and accessories.
・Microprocessor
based equipment.
・Personal
digital assistants (PDA s).
・Notebooks,
desktops, & servers.
・Portable
instrument
・Pagers
peripherals.
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.60 + 0.10
_
1.20 + 0.10
_
0.80 + 0.10
_
0.30 + 0.05
_
0.60 + 0.10
_
0.13 + 0.05
B
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
P
D
T
j
T
stg
RATING
150
150
-55½150
UNIT
mW
Marking
Type Name
D1
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Zener Voltage
Reverse Leakage Current
Total Capacitance
SYMBOL
V
Z
I
R
C
t
I
t
=5mA
V
R
=3.5V
V
R
=0V, f=1MHz
TEST CONDITION
MIN.
6.65
-
-
TYP.
-
-
-
MAX.
7.45
0.5
5.0
UNIT
V
μ
A
pF
2007. 5. 16
Revision No : 3
A
ESC
1/2
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