RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self
bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage
and does not require a bias resistor as compared to typical Darlington amplifiers.
The CXE-2022Z was developed for low noise, portable, linear gain block consumer applications
which require small size, low current, and a few external components. The part is internally
matched to 75 and designed to operate over the 50MHz to 1000MHz bandwidth.
Features
Low Noise Figure: 1.2dB
Flat Gain Response: 17.5dB
± 0.15dB
High Linearity IIP3: 0dBm
Single Supply: 2.7V to 3.3V
Low Current: 20mA
DVB/T Recievers/Antennas
DMB-T Receivers/Antennas
PCTV and Other Portable
Devices
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Gain (dB)
19
20
CXE-2022Z Gain
Applications
18
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
17
16
15
14
470
520
570
620
670
Freq (MHz)
720
770
820
870
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Small Signal Gain
16.5
17.5
dB
500MHz
Gain Flatness
+/-.15
dB
470MHz to 860MHz
Output Power at 1dB Compression
1.3
dBm
500MHz
Input Third Order Intercept Point
0
dBm
500MHz
Input Second Order Intercept Point
10
dBm
500MHz
Input Return Loss
-13.5
dB
50MHz to 860MHz
Output Return Loss
-10
dB
50MHz to 860MHz
Noise Figure
1.2
1.5
dB
500MHz
Device Operating Voltage
2.7
3.6
V
Device Operating Current
17
20
mA
Test Conditions: V
P
=3.3V, I
D
=20mA Typ, IIP
3,
IIP
2
Tone Spacing= 1MHz, P
OUT
per tone=-10dBm, T
L
=25°C, Z
S
=Z
L
=75, Tested with App Circuit
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
京公网安备 11010802033920号
EEWORLD
